MT4C1M16E5 Micron Technology, MT4C1M16E5 Datasheet - Page 11

• Manufacturer Part Number: MT4C1M16E5
• Description: EDO DRAM
• Manufacturer: Micron Technology

NOTES (continued)
26.Each CAS#x must meet minimum pulse width.
27.The last CAS#x edge to transition HIGH.
28.Last falling CAS#x edge to first rising CAS#x edge.
29.Last rising CAS#x edge to first falling CAS#x edge.
30.Last rising CAS#x edge to next cycle’s last rising
1 Meg x 16 EDO DRAM
D52_B.p65 – Rev. B; Pub. 3/01
CAS#x edge.
11
31.Last CAS#x to go LOW.
32.A HIDDEN REFRESH may also be performed after
a WRITE cycle. In this case, WE# is LOW and
OE# is HIGH.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
16Mb: 1 MEG x16
EDO DRAM
©2001, Micron Technology, Inc