RF5110 RF Micro Devices, RF5110 Datasheet

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RF5110

Manufacturer Part Number
RF5110
Description
3V GSM POWER AMPLIFIER
Manufacturer
RF Micro Devices
Datasheet

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Product Description
The RF5110 is a high-power, high-efficiency power ampli-
fier module offering high performance in GSM OR GPRS
applications. The device is manufactured on an advanced
GaAs HBT process, and has been designed for use as
the final RF amplifier in GSM hand-held digital cellular
equipment and other applications in the 800MHz to
950MHz band. On-board power control provides over
70dB of control range with an analog voltage input, and
provides power down with a logic “low” for standby opera-
tion. The device is self-contained with 50Ω input and the
output can be easily matched to obtain optimum power
and efficiency characteristics. The RF5110 can be used
together with the RF5111 for dual-band operation. The
device is packaged in an ultra-small 3mmx3mmx1mm
plastic package, minimizing the required board space.
Optimum Technology Matching® Applied
Rev A0 050318
Typical Applications
• 3V GSM Cellular Handsets
• 3V Dual-Band/Triple-Band Handsets
• GPRS Compatible
Si BJT
Si Bi-CMOS
InGaP/HBT
GND1
GND2
VCC1
RF IN
Functional Block Diagram
1
2
3
4
16
5
GaAs HBT
SiGe HBT
GaN HEMT
15
6
14
7
0
13
8
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
12
11
10
9
RF OUT
RF OUT
RF OUT
RF OUT
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
Features
Ordering Information
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
• Single 2.7V to 4.8V Supply Voltage
• +36dBm Output Power at 3.5V
• 32dB Gain with Analog Gain Control
• 57% Efficiency
• 800MHz to 950MHz Operation
• Supports GSM and E-GSM
RF5110
RF5110 PCBA
Package Style: QFN, 16-Pin, 3x3
Shaded lead is pin 1.
0.15 C B
2 PLCS
0.15 C A
-A-
2 PLCS
3V GSM Power Amplifier
Fully Assembled Evaluation Board
3.00 SQ.
2.75 SQ.
3V GSM POWER AMPLIFIER
4 PLCS
0.45
0.00
4 PLCS
0.23
0.13
0.60
0.24
TYP
-B-
1.37 TYP
2 PLCS
1.50 TYP
2 PLCS
0.15 C A
0.15 C B
0.50
Dimensions in mm.
0.10 M
RF5110
0.30
0.18
MAX
12°
C A B
1.00
0.85
0.80
0.65
0.55
0.30
1.65
1.35
http://www.rfmd.com
-C-
SQ.
Fax (336) 664 0454
Tel (336) 664 1233
0.05
0.01
SEATING
PLANE
0.05 C
2-1

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RF5110 Summary of contents

Page 1

... GSM Cellular Handsets • 3V Dual-Band/Triple-Band Handsets • GPRS Compatible Product Description The RF5110 is a high-power, high-efficiency power ampli- fier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as ...

Page 2

... RF5110 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (V ) APC1,2 DC Supply Current Input RF Power Duty Cycle at Max Power Output Load VSWR Operating Case Temperature Storage Temperature Parameter Min. Overall Operating Frequency Range Usable Frequency Range Maximum Output Power 33.8 33.1 Total Efficiency Input Power for Max Output +4 ...

Page 3

... Power Supply Power Supply Voltage Power Supply Current Rev A0 050318 Specification Typ. Max. 3.5 2.7 4.8 5 200 335 RF5110 Unit Condition V Specifications V Nominal operating limits, P OUT V With maximum output load VSWR 6:1, P <+35dBm OUT A DC Current at P OUT,MAX mA Idle Current, P <-30dBm IN μ ...

Page 4

... RF5110 Pin Function Description 1 VCC1 Power supply for the pre-amplifier stage and interstage matching. This pin forms the shunt inductance needed for proper tuning of the inter- stage match. Refer to the application schematic for proper configura- tion. Note that position and value of the components are important. ...

Page 5

... Theory of Operation and Application Information The RF5110 is a three-stage device with 32 dB gain at full power. Therefore, the drive required to fully saturate the out- put is +3dBm. Based upon HBT (Heterojunction Bipolar Transistor) technology, the part requires only a single positive 3V supply to operate to full specification. Power control is provided through a single pin interface, with a separate Power Down control pin ...

Page 6

... RF5110 VCC1 5 Ω Ω 1.0 kΩ APC1 PKG BASE 2-6 Internal Schematic VCC2 4.5 pF APC1 VCC 400 Ω GND2 RF OUT APC2 VCC 300 Ω PKG BASE Rev A0 050318 ...

Page 7

... C14 8 mils C9 C10 and C10 share the same pad RF5110 P1-1 VCC P2-1 1 P1-2 2 VCC 2 3 GND 3 CON3 GND 4 CON4 L4 C12 50 Ω μstrip 1 mils 40 mils C11 9.1 pF VAPC ...

Page 8

... RF5110 Evaluation Board Schematic 50 Ω μstrip J3 VAPC VAPC VCC1 C2 C3 C19 Ω μstrip 180 Ω Ω Ferrite 1.6 nH VCC2 + C21 C5 C6 C20 3.3 μ 2-8 GSM900 Lumped Element VCC C17 C16 C15 ...

Page 9

... Board Thickness 0.032”; Board Material FR-4; Multi-Layer Rev A0 050318 Evaluation Board Layout Board Size 2.0” x 2.0” RF5110 2-9 ...

Page 10

... Pulse Generator Notes about testing the RF5110 The test setup shown above includes two attenuators. The 3dB pad at the input is to minimize the effect on the signal generator as a result of switching the input impedance of the PA. When V impedance change can cause the signal generator to vary its output signal, either in output level or in frequency. Instead of an attenuator an isolator may also be used ...

Page 11

... PCB Metal Land Pattern 0.50 Typ. 0.55 Typ. Figure 1. PCB Metal Land Pattern (Top View) Rev A0 050318 PCB Design Requirements A = 0.64 x 0.28 (mm) Typ 0.28 x 0.64 (mm) Typ 1.50 (mm) Sq. Dimensions in mm. 1.50 Typ. 0.50 Typ. Pin Pin Pin 8 0.55 Typ. 0.75 Typ. RF5110 Pin 12 A 0.75 Typ. A 1.50 Typ 2-11 ...

Page 12

... RF5110 PCB Solder Mask Pattern Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the PCB metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. The center-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask clearance can be provided in the master data or requested from the PCB fabrication supplier ...

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