2SJ387S HITACHI [Hitachi Semiconductor], 2SJ387S Datasheet - Page 6

• Manufacturer Part Number: 2SJ387S
• Description: Silicon P-Channel MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

2SJ387(L), 2SJ387(S)
6
1000
500
200
100
–10
–20
–30
–40
–50
50
20
10
–0.1 –0.3
0
0
V
I
D
Reverse Drain Current
DS
= –10 A
Dynamic Input Characteristics
Body to Drain Diode Reverse
20
Gate Charge
V
–1
Recovery Time
V
GS
40
DD
di / dt = 20 A / s
V
= –5 V
–3
–10 V
–15 V
GS
V
60
= 0, Ta = 25 C
DD
Qg (nc)
–10
= –5 V
–10 V
–15 V
I
DR
80
–30 –100
(A)
100
0
–4
–8
–12
–16
–20
10000
1000
5000
2000
1000
500
200
100
500
200
100
50
20
10
–0.1 –0.3
0
Drain to Source Voltage V
–10
Switching Characteristics
Typical Capacitance vs.
Drain to Source Voltage
t f
Drain Current
Coss
Crss
V
PW = 5 µs, duty < 1 %
Ciss
t
t
–1
GS
d(off)
d(on)
r t
–20
= –4 V, V
–3
–30
–10
I
DD
D
V
f = 1 MHz
= –10 V
(A)
GS
–40
–30
DS
= 0
(V)
–100
–50