2SJ387S HITACHI [Hitachi Semiconductor], 2SJ387S Datasheet - Page 5

• Manufacturer Part Number: 2SJ387S
• Description: Silicon P-Channel MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

0.16
0.12
0.08
0.04
–0.5
–0.4
–0.3
–0.2
–0.1
0.2
–40
Static Drain to Source on State Resistance
0
0
Drain to Source Saturation Voltage vs.
Pulse Test
Gate to Source Voltage
V
Case Temperature
GS
–2
0
Gate to Source Voltage
= –2.5 V
vs. Temperature
–4 V
40
–4
80
I
–6
D
I
–1 A
= –5 A
D
Tc
Pulse Test
–2 A
–1 A
= –5 A
V
120
–1, –2 A
–8
GS
–2 A
(°C)
–5 A
(V)
160
–10
0.05
0.02
0.01
0.5
0.5
0.2
0.1
50
20
10
–0.1 –0.2
5
2
1
Static Drain to Source on State Resistance
–0.5
1
Forward Transfer Admittance vs.
–1
Drain Current I
Drain Current
V
GS
–2
vs. Drain Current
–0.5
2SJ387(L), 2SJ387(S)
Drain Current
25 °C
= –2.5 V
–4 V
–1
Tc = –25 °C
–5
75 °C
–10 –20
–2
D
I
V
Pulse Test
D
DS
Pulse Test
(A)
(A)
= –10 V
–5
–10
–50
5