2SJ387S HITACHI [Hitachi Semiconductor], 2SJ387S Datasheet - Page 3

• Manufacturer Part Number: 2SJ387S
• Description: Silicon P-Channel MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current I
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note:
1. Pulse Test
Symbol
V
V
I
V
R
|y
Ciss
Coss
Crss
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DS(on)
DF
fs
|
Min
–20
—
—
–0.5
—
—
7
—
—
—
—
—
—
—
—
—
10
Typ
—
—
—
—
—
0.05
0.07
12
1170
860
310
20
325
350
425
–1.0
240
Max
—
—
–100
–1.5
0.07
0.1
—
—
—
—
—
—
—
—
—
—
10
Unit
V
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
A
A
2SJ387(L), 2SJ387(S)
Test conditions
I
I
V
V
I
I
V
I
V
I
V
V
V
f = 1 MHz
I
V
R
I
I
diF/dt = 20 A/ s
D
G
D
D
D
D
D
F
F
GS
DS
GS
GS
DS
DS
GS
GS
L
= –10 A, V
= –10 A, V
= –10 mA, V
= 200 A, V
= –1 mA, V
= –5 A
= –5 A
= –5 A
= –5 A
= 2
= –16 V, V
= –10 V*
= –10 V
= 6.5 V, V
= –4 V*
= –2.5 V*
= 0
= –4 V
1
1
GS
GS
1
DS
GS
GS
DS
= 0
= 0,
DS
= –10 V
= 0
= 0
= 0
= 0
3