m5m4v4s40ctp-12 Mitsumi Electronics, Corp., m5m4v4s40ctp-12 Datasheet - Page 14

• Manufacturer Part Number: m5m4v4s40ctp-12
• Description: 2-bank 131072-word 16-bit Synchronous Dram
• Manufacturer: Mitsumi Electronics, Corp.

SDRAM (Rev. 0.3)
Feb ‘97 Preliminary
[ BURST ADDRESS SEQUENCE ]
Note: For FP Burst the Burst Type must be set to sequential.
Initial Address BL
A2
0
0
0
0
1
1
1
1
-
-
-
-
-
-
Command
Address
A1 A0
0
0
1
1
0
0
1
1
0
0
1
1
-
-
CLK
DQ
0
1
0
1
0
1
0
1
0
1
0
1
0
1
4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM
CL= 3
BL= 4
8
4
2
0
1
2
3
4
5
6
7
0
1
2
3
0
1
Read
Y
/CAS Latency
1
2
3
4
5
6
7
0
1
2
3
0
1
0
2
3
4
5
6
7
0
1
2
3
0
1
Sequential
MITSUBISHI ELECTRIC
3
4
5
6
7
0
1
2
3
0
1
2
M5M4V4S40CTP-12, -15
Q0
4
5
6
7
0
1
2
3
Column Addressing / Burst Type
Burst Length
5
6
7
0
1
2
3
4
Q1
Internal addresses are determined by Burst Type.
6
7
0
1
2
3
4
5
Q2
7
0
1
2
3
4
5
6
Q3
0
1
2
3
4
5
6
7
0
1
2
3
0
1
1
0
3
2
5
4
7
6
1
0
3
2
1
0
Write
2
3
0
1
6
7
4
5
2
3
0
1
D0
Y
Interleaved
3
2
1
0
7
6
5
4
3
2
1
0
Burst Length
D1
4
5
6
7
0
1
2
3
MITSUBISHI LSIs
D2
5
4
7
6
1
0
3
2
D3
6
7
4
5
2
3
0
1
7
6
5
4
3
2
1
0
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