nths5404t1 ON Semiconductor, nths5404t1 Datasheet - Page 4

• Manufacturer Part Number: nths5404t1
• Description: Power Mosfet
• Manufacturer: ON Semiconductor

100
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1800
1500
1200
10
900
600
300
1
0.01
0.1
1
0
1
12
Figure 9. Resistive Switching Time Variation
0.0001
C
C
0.02
0.2
0.1
0.05
Duty Cycle = 0.5
rss
iss
8
V
R
Figure 7. Capacitance Variation
DS
G
versus Gate Resistance
t
t
, GATE RESISTANCE (OHMS)
d(off)
d(on)
t
t
= 0 V
4
f
r
V
GS
0.001
Figure 11. Normalized Thermal Transient Impedance, Junction−to−Ambient
Single Pulse
0
V
V
GS
DS
10
= 0 V
4
TYPICAL ELECTRICAL CHARACTERISTICS
C
8
0.01
oss
V
I
V
D
DD
GS
= +1.0 A
12
SQUARE WAVE PULSE DURATION (sec)
= 10 V
= 4.5 V
T
J
= 25 C
16
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100
NTHS5404
0.1
20
4
5
4
3
2
1
0
5
4
3
2
1
0
0
0
Drain−to−Source Voltage versus Total Charge
Q
1
V
P
GD
SD
DM
DUTY CYCLE, D = t
Figure 10. Diode Forward Voltage versus
1
2
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 8. Gate−to−Source and
V
T
0.2
t
1
Q
J
GS
3
= 25 C
G
t
2
, TOTAL GATE CHARGE (nC)
= 0 V
4
Q
GS
5
0.4
1
/t
2
10
6
Current
Q
PER UNIT BASE = R
T
SURFACE MOUNTED
JM
G
7
− T
A
8
0.6
= P
I
T
Q
D
DM
J
GD
9
= 5.2 A
= 25 C
Z
100
/Q
qJA
10 11 12
GS
(t)
qJA
= 1.33
0.8
= 80 C/W
11
10
9
8
7
6
5
4
3
2
1
0
1000