nths5404t1 ON Semiconductor, nths5404t1 Datasheet

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nths5404t1

Manufacturer Part Number
nths5404t1
Description
Power Mosfet
Manufacturer
ON Semiconductor
Datasheet

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NTHS5404
Power MOSFET
20 V, 7.2 A, N−Channel ChipFETE
Features
Applications
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
MAXIMUM RATINGS
February, 2005 − Rev. 4
Drain−Source Voltage
Gate−Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current
Maximum Power Dissipation
Operating Junction and Storage
Cellular and Cordless Telephones and PCMCIA Cards
Low R
Logic Level Gate Drive
Miniature ChipFET Surface Mount Package Saves Board Space
Pb−Free Package is Available
Power Management in Portable and Battery−Powered Products; i.e.,
Semiconductor Components Industries, LLC, 2005
[1 oz] including traces).
(T
(Diode Conduction) (Note 1)
(Note 1)
Temperature Range
J
T
T
T
T
A
A
A
A
= 150 C) (Note 1)
= 25 C
= 85 C
= 25 C
= 85 C
DS(on)
Rating
for Higher Efficiency
(T
A
= 25 C unless otherwise noted)
Symbol
T
J
V
V
I
P
, T
DM
I
I
DS
GS
D
S
D
stg
5 Secs
7.2
5.2
7.2
2.5
1.3
−55 to +150
"12
"20
20
Steady
State
5.2
3.8
5.2
1.3
0.7
1
Unit
W
V
V
A
A
A
C
†For information on tape and reel specifications,
NTHS5404T1
NTHS5404T1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
V
D
D
D
S
CONNECTIONS
Device
(BR)DSS
20 V
8
7
6
5
ORDERING INFORMATION
PIN
A2 = Specific Device Code
M = Month Code
G
http://onsemi.com
1
2
3
4
N−Channel MOSFET
25 mW @ 4.5 V
(Pb−Free)
Package
ChipFET
ChipFET
R
G
D
D
D
DS(on)
D
Publication Order Number:
TYP
1
2
3
4
S
CASE 1206A
3000/Tape & Reel
3000/Tape & Reel
ChipFET
STYLE 1
MARKING
DIAGRAM
NTHS5404T1/D
Shipping
I
D
7.2 A
MAX
8
7
6
5

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nths5404t1 Summary of contents

Page 1

... ChipFET 3000/Tape & Reel NTHS5404T1G ChipFET 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTHS5404T1/D MAX D 7 † ...

Page 2

THERMAL CHARACTERISTICS Characteristic Maximum Junction−to−Ambient (Note sec Steady State Maximum Junction−to−Foot (Drain) Steady State ELECTRICAL CHARACTERISTICS Characteristic Static Gate Threshold Voltage Gate−Body Leakage Zero Gate Voltage Drain Current On−State Drain Current (Note 3) Drain−Source On−State Resistance ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 12 1 − 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.06 ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS iss 1800 1500 C 1200 rss 900 600 C 300 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure ...

Page 5

... Figure 12. Basic *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. The basic pad layout with dimensions is shown in Figure 12. This is sufficient for low power dissipation MOSFET applications, but power semiconductor performance requires a greater copper pad area, particularly for the drain leads ...

Page 6

... BSC J 0.10 0.20 0.004 0.008 K 0.28 0.42 0.011 0.017 L 0.55 BSC 0.022 BSC M 5 NOM 5 NOM S 1.80 2.00 0.072 0.080 STYLE 1: PIN 1. DRAIN 2. DRAIN 3. DRAIN 4. GATE 5. SOURCE 6. DRAIN 7. DRAIN 8. DRAIN ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTHS5404T1/D ...

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