nths5404t1 ON Semiconductor, nths5404t1 Datasheet - Page 5

• Manufacturer Part Number: nths5404t1
• Description: Power Mosfet
• Manufacturer: ON Semiconductor

Figure 12. This is sufficient for low power dissipation
MOSFET applications, but power semiconductor
performance requires a greater copper pad area,
particularly for the drain leads.
Figure 13 improves the thermal area of the drain
connections (pins 1, 2, 3, 6, 7, 8) while remaining within the
The basic pad layout with dimensions is shown in
The minimum recommended pad pattern shown in
0.457
0.018
0.026
0.66
Figure 12. Basic
2.032
0.028
0.08
0.711
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
0.635
0.025
SOLDERING FOOTPRINT*
BASIC PAD PATTERNS
http://onsemi.com
NTHS5404
5
confines of the basic footprint. The drain copper area is
0.0054 sq. in. (or 3.51 sq. mm). This will assist the power
dissipation path away from the device (through the copper
lead−frame) and into the board and exterior chassis (if
applicable) for the single device. The addition of a further
copper area and/or the addition of vias to other board layers
will enhance the performance still further.
0.457
0.018
0.026
0.66
Figure 13. Style 1
2.032
0.028
0.08
0.711
1.727
0.068
0.178
0.007