VS-6CWT10FN-E VISHAY [Vishay Siliconix], VS-6CWT10FN-E Datasheet - Page 4

• Manufacturer Part Number: VS-6CWT10FN-E
• Description: High Performance Schottky Generation 5.0, 2 x 3 A
• Manufacturer: VISHAY [Vishay Siliconix]

VS-6CUT10-E, VS-6CWT10FN-E
Vishay Semiconductors
Note
(1)
www.vishay.com
4
Formula used: T
Pd = Forward power loss = I
Pd
REV
180
175
170
165
160
155
150
145
Fig. 5 - Maximum Allowable Case Temperature vs.
= Inverse power loss = V
0
See note (1)
Square wave (D = 0.50)
80 % rated V
I
F(AV)
C
1
- Average Forward Current (A)
Average Forward Current
= T
J
R
- (Pd + Pd
applied
2
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
F(AV)
R1
x V
REV
x I
3
FM
) x R
R
(1 - D); I
DC
at (I
1000
thJC
100
10
3
F(AV)
Fig. 7 - Maximum Non-Repetitive Surge Current
;
10
High Performance Schottky
R
/D) (see fig. 6);
at V
t
p
Generation 5.0, 2 x 3 A
- Square Wave Pulse Duration (µs)
5
R1
= 80 % rated V
100
R
1000
2.5
1.5
0.5
2
1
0
[e-mail]
0
Fig. 6 - Forward Power Loss Characteristics
0.5
I
10 000
F(AV)
270°
180°
120°
90°
72°
1
- Average Forward Current (A)
1.5
2
2.5
RMS limit
3
Document Number: 94662
3.5
Revision: 05-Jan-11
DC
4
4.5