VS-6CWT10FN-E VISHAY [Vishay Siliconix], VS-6CWT10FN-E Datasheet - Page 3

• Manufacturer Part Number: VS-6CWT10FN-E
• Description: High Performance Schottky Generation 5.0, 2 x 3 A
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 94662
Revision: 05-Jan-11
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
0.1
10
1
0
T
J
0.01
= 175 °C
0.2
V
0.1
10
0.00001
FM
1
- Forward Voltage Drop (V)
0.4
T
0.6
J
(Thermal resistance)
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= 25 °C
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Single pulse
0.8
T
J
= 125 °C
1.0
0.0001
Fig. 4 - Maximum Thermal Impedance Z
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1000
1.2
100
10
0
1.4
High Performance Schottky
5
t
Generation 5.0, 2 x 3 A
1
1.6
- Rectangular Pulse Duration (s)
10
V
0.001
R
- Reverse Voltage (V)
15
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
20
25
VS-6CUT10-E, VS-6CWT10FN-E
30
0.0001
0.001
0.01
0.01
thJC
35
0.1
10
1
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0
Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
40
175 °C
5
45
10
125 °C
V
100 °C
R
- Reverse Voltage (V)
15
150 °C
Reverse Voltage
Vishay Semiconductors
0.1
50 °C
75 °C
20
25 °C
25
30
35
1
40
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45
3