VS-6CWT10FN-E VISHAY [Vishay Siliconix], VS-6CWT10FN-E Datasheet

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VS-6CWT10FN-E

Manufacturer Part Number
VS-6CWT10FN-E
Description
High Performance Schottky Generation 5.0, 2 x 3 A
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Document Number: 94662
Revision: 05-Jan-11
PRODUCT SUMMARY
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
V
V
T
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
J
RRM
F
I-PAK (TO-251AA)
Anode
Diode variation
VS-6CUT10-E
Package
I
RM
T
V
1
Common
common
J
cathode
cathode
I
F
E
F(AV)
V
Base
max.
at I
max.
AS
High Performance Schottky Generation 5.0, 2 x 3 A
R
2
F
4
Anode
3
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
3 A
Range
D-PAK (TO-252AA)
pk
D-PAK (TO-252AA),
I-PAK (TO-251AA)
Common cathode
Anode
VS-6CWT10FN-E
, T
1 mA at 125 °C
CHARACTERISTICS
1
SYMBOL
J
= 125 °C (typical, per leg)
Common
common
2 x 3 A
175 °C
cathode
cathode
0.63 V
12 mJ
100 V
V
Base
R
2
4
Anode
3
T
J
TEST CONDITIONS
= 25 °C
VS-6CUT10-E, VS-6CWT10FN-E
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized V
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Specific for PV cells bypass diode
• High efficiency SMPS
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• DC/DC systems
• Increased power density systems
- 55 to 175
DiodesEurope@vishay.com
VALUES
100
0.6
F
VS-6CWT10FN-E
vs. I
VS-6CUT10-E
R
100
trade off for high efficiency
Vishay Semiconductors
UNITS
°C
V
www.vishay.com
UNITS
V
1

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VS-6CWT10FN-E Summary of contents

Page 1

... Maximum DC reverse voltage Document Number: 94662 For technical questions within your region, please contact one of the following: Revision: 05-Jan-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, VS-6CUT10-E, VS-6CWT10FN-E FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage Base • ...

Page 2

... VS-6CUT10-E, VS-6CWT10FN-E Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER per leg Maximum average forward current per device Maximum peak one cycle non-repetitive surge current per leg Non-repetitive avalanche energy per leg Repetitive avalanche current per leg ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Forward voltage drop per leg ...

Page 3

... Single pulse (Thermal resistance) 0.01 0.00001 0.0001 Fig Maximum Thermal Impedance Z Document Number: 94662 For technical questions within your region, please contact one of the following: Revision: 05-Jan-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, VS-6CUT10-E, VS-6CWT10FN-E High Performance Schottky Generation 5. 0.1 0.01 0.001 0.0001 1.2 1.4 1.6 1000 100 ...

Page 4

... VS-6CUT10-E, VS-6CWT10FN-E Vishay Semiconductors 180 175 170 165 160 155 Square wave (D = 0.50 rated V applied 150 R See note (1) 145 Average Forward Current (A) F(AV) Fig Maximum Allowable Case Temperature vs. Average Forward Current Note (1) Formula used ( REV Pd = Forward power loss = I ...

Page 5

... Fig Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration) Document Number: 94662 For technical questions within your region, please contact one of the following: Revision: 05-Jan-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, VS-6CUT10-E, VS-6CWT10FN-E High Performance Schottky Generation 5. ° 125 °C ...

Page 6

... VS-6CUT10-E, VS-6CWT10FN-E Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS Dimensions Part marking information www.vishay.com For technical questions within your region, please contact one of the following: 6 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, High Performance Schottky Generation 5. ...

Page 7

DIMENSIONS FOR I-PAK - S in millimeters E e SYMBOL Document Number: 95024 For technical questions within your region, please contact one of the following: Revision: 05-Jan-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, I-PAK - S, D-PAK DIMENSIONAL REQUIREMENTS MIN. ...

Page 8

Outline Dimensions Vishay Semiconductors DIMENSIONS FOR D-PAK in millimeters and inches ( (3) b3 0.010 (3) 4 Ø ( ( 0.010 M C ...

Page 9

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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