gvt7164b18 Cypress Semiconductor Corporation., gvt7164b18 Datasheet - Page 6

• Manufacturer Part Number: gvt7164b18
• Description: 64k X 18 Synchronous Burst Sram Semiconductor
• Manufacturer: Cypress Semiconductor Corporation.

Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Voltage on V
V
Storage Temperature (plastic) .................... –55°C to +125°C
Junction Temperature ............................................... +125°C
Electrical Characteristics
Capacitance
Document #: 38-05204 Rev. *A
I
I
I
I
I
C
C
Notes:
V
V
IL
IL
V
V
V
CC
SB1
SB2
SB3
SB4
10. Please refer to waveform (d)
11. Power Supply ramp-up should be monotonic.
12. Values in table are associated with the operating frequencies listed.
13. All voltages referenced to V
14. Overshoot: V
15. MODE pin has an internal pull-up and ZZ pin has an internal pull-down. These two pins exhibit an input leakage current of ±30 A.
16. AC I/O curves are available upon request.
17. I
18. “Device Deselected” means the device is in Power-down mode as defined in the truth table. “Device Selected” means the device is active.
19. Typical values are measured at 3.3V, 25°C, and 20-ns cycle time.
20. This parameter is sampled.
IN
Parameter
9.
Parameter
I
O
IH
Il
OH
OL
CC
I
O
...........................................................–0.5V to V
T
Undershoot:V
CC
Parameter
A
is the case temperature.
is given with no output current. I
CC
Power Supply Current:
Operating
Power Supply Current:
Idle
CMOS Standby
TTL Standby
Clock Running
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
IH
IL
Supply Relative to V
[20]
[18, 19]
+6.0V for t
–2.0V for t
Description
Input Capacitance
Input/Output Capacitance (DQ)
[17, 18, 19]
SS
Description
[18, 19]
t
(GND).
t
[18, 19]
KC
KC
[13]
[18, 19]
/2.
/2.
CC
Description
Over the Operating Range
[13, 16]
[13, 16]
increases with greater output loading and faster cycle times.
SS
[15]
Device selected; all inputs < V
cycle time > t
outputs open
Device selected; ADSC, ADSP, ADV, GW,
BWE >V
= Max.; cycle time > t
Device deselected; V
all inputs < V
all inputs static; CLK frequency = 0
Device deselected; all inputs < V
or > V
V
Device deselected;
all inputs < V
CLK cycle time > t
......... –0.5V to +4.6V
CC
[13, 14]
[13, 14]
= Max.; CLK frequency = 0
IH
; all inputs static;
IH
; all other inputs < V
CC
SS
IL
KC
0V < V
Output(s) disabled, 0V < V
I
I
OH
OL
or > V
+0.5V
+ 0.2 or >V
min.; V
Conditions
= 8.0 mA
KC
= –4.0 mA
T
V
A
CC
IN
KC
CC
IH
[12]
min.
= 25 C, f = 1 MHz,
Test Conditions
; V
= 3.3V
CC
< V
Test Conditions
min.; outputs open
= Max.;
CC
= Max.;
Power Dissipation.......................................................... 1.4W
Short Circuit Output Current...................................... 100 mA
Operating Range
CC
CC
Com’l
= Max.;
Range
IL
IL
– 0.2;
or > V
or > V
IL
IH
IH
; V
;
OUT
CC
Temperature
< V
0°C to +70°C
Typ.
Typ.
150
0.2
Ambient
15
15
CC
4
3
6
66 MHz
Min.
–0.3
2.0
2.4
3.1
–2
–2
240
40
10
40
-9
2
[9]
Max.
4
7
50 MHz
240
-10
V
40
10
40
GVT7164B18
2
CY7C1297A/
CCQ
Max.
3.3V 5%/+10%
0.8
0.4
3.6
2
2
+0.3
V
50 MHz
CC
200
-12
Page 6 of 13
30
10
30
2
[10,11]
Unit
pF
pF
Unit
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
A
A