hx6136 Honeywell International's Solid State Electronics Center (SSEC), hx6136 Datasheet - Page 4

• Manufacturer Part Number: hx6136
• Description: First-in First-out Memory
• Manufacturer: Honeywell International's Solid State Electronics Center (SSEC)

FIFO – HX6409/HX6218/HX6136
RADIATION CHARACTERISTICS
Total Ionizing Radiation Dose
All FIFO configurations will meet all stated functional
and electrical specifications over the entire operating
temperature range after the specified total ionizing
radiation dose. All electrical and timing performance
parameters will remain within specifications after
rebound at VDD = 5.5 V and T = 125°C extrapolated to
ten years of operation. Total dose hardness is assured
by wafer level testing of process monitor transistors and
product using 10 KeV X-ray and Co60 radiation
sources. Transistor gate threshold shift correlations
have been made between 10 KeV X-rays applied at a
dose rate of 1x10
rays (Cobalt 60 source) to ensure that wafer level X-ray
testing is consistent with standard military radiation test
environments.
Transient Pulse Ionizing Radiation
Each FIFO configuration is capable of writing, reading
and retaining stored data during and after exposure to a
transient ionizing radiation pulse of ≤50 ns duration up
to 1x10
operating conditions. To ensure validity of all specified
performance parameters before, during, and after
radiation (timing degradation during transient pulse
radiation (timing degradation during transient pulse
radiation is ≤10%), it is suggested that stiffening
capacitance be placed near the package VDD and
VSS, with a maximum inductance between the package
(chip) and stiffening capacitor of 0.7nH per part. If there
are
requirements, typical circuit board mounted de-coupling
capacitors are recommended.
RADIATION-HARDNESS RATINGS (1)
4
Parameter
Total Dose
Transient Dose Rate Upset
Transient Dose Rate Survivability
Soft Error Rate
Neutron Fluence
(1) Device will not latch up due to any of the specified radiation exposure conditions.
(2) Operating conditions (unless otherwise specified): VDD= 4.5V to 5.5V, TA = 55˚C to 125˚C.
no
9
rad(Si)/s, when applied under recommended
operate-through
5
rad(Si)/min at T = 25°C and gamma
or
valid
Limits (2)
<1x10
>1x10
>1x10
>1x10
>1x10
stored
-10
11
14
6
9
data
upsets/bit-day
rad(Si)/s
rad(Si)/s
rad(Si)
N/cm
Units
2
Each FIFO will meet any functional or electrical
specification after exposure to a radiation pulse of ≤50
ns duration up to 1x10
recommended operating conditions. Note the current
conducted by the inputs, outputs and power supply
during the pulse may significantly exceed the normal
operating
accommodate these effects.
Neutron Radiation
Each FIFO configuration will meet any functional or
timing specification after a total neutron fluence of up to
1x10
storage conditions. This assumes equivalent neutron
energy of 1 MeV.
Soft Error Rate
This FIFO configuration has a soft error rate (SER)
performance
recommended operating conditions. This hardness
level is defined by the Adams 90% worst-case cosmic
ray environment.
Latchup
This FIFO configuration will not latch up due to any of
the above radiation exposure conditions when applied
under recommended operating conditions. Fabrication
with the SOI substrate with its oxide isolation ensures
latchup immunity.
14
T
Pulse width ≤50ns, X-ray, VDD=6.0 V, T
cm
1 MeV equivalent energy, Unbiased, T
A
=125°C, Adams 90% worst case environment
-2
levels.
applied under recommended operating or
of
<1x10
Pulse width ≤50ns
The
Test Conditions
11
www.honeywell.com/radhard
rad(Si)/s, when applied under
T
-10
A
application
=25°C
upsets/bit-day,
design
A
A
=25°C
=25°C
under
must