mt9vddf6472phy-335 Micron Semiconductor Products, mt9vddf6472phy-335 Datasheet - Page 13

• Manufacturer Part Number: mt9vddf6472phy-335
• Description: 256mb, 512mb X72, Ecc, Pll, Sr 200-pin Ddr Sodimm
• Manufacturer: Micron Semiconductor Products

Table 9:
PDF: 09005aef81eef7d4/Source: 09005aef81eef0df
DDF9C32_64x72PH_2.fm - Rev. A 1/06 EN
Parameter/Condition
OPERATING CURRENT: One device bank; Active-Precharge;
t
once per clock cyle; Address and control inputs changing once
every two clock cycles
OPERATING CURRENT: One device bank; Active-Read-Precharge;
Burst = 4
and control inputs changing once per clock cycle
PRECHARGE POWER-DOWN STANDBY CURRENT: All device
banks idle; Power-down mode;
IDLE STANDBY CURRENT: CS# = HIGH; All device banks idle;
=
changing once per clock cycle. V
ACTIVE POWER-DOWN STANDBY CURRENT: One device bank
active; Power-down mode;
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One
device bank; Active-Precharge;
(MIN); DQ, DM and DQS inputs changing twice per clock cycle;
Address and other control inputs changing once per clock cycle
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One
device bank active; Address and control inputs changing once
per clock cycle; CK =
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One
device bank active; Address and control inputs changing once
per clock cycle;
changing twice per clock cycle
AUTO REFRESH CURRENT
SELF REFRESH CURRENT: CKE ≤ 0.2V
OPERATING CURRENT: Four bank interleaving READs (BL=4) with
auto precharge with,
and control inputs change only during Active READ, or WRITE
commands
RC (MIN);
t
CK MIN; CKE = HIGH; Address and other control inputs
;
t
RC =
t
CK =
I
DDR SDRAM components only;
Notes: 1–5, 8, 10, 12, 42; notes appear on pages 15–17; 0°C ≤ T
DD
t
t
RC (MIN);
CK =
t
CK (MIN); DQ, DM and DQS inputs changing
Specifications and Conditions – 512MB
t
CK (MIN); I
t
t
CK (MIN); DQ, DM, and DQS inputs
RC =
t
CK =
t
t
CK =
RC (MIN);
t
t
RC = RAS (MAX);
t
OUT
CK =
IN
CK (MIN); I
t
CK (MIN); CKE = LOW
= V
= 0mA
t
REF
CK (MIN); CKE = (LOW)
t
CK =
for DQ, DQS, and DM
t
t
256MB, 512MB: (x72, ECC, PLL, SR) 200-Pin DDR SODIMM
REFC =
REFC = 7.8125µs
OUT
t
CK (MIN); Address
= 0mA; Address
t
CK =
t
RFC (MIN)
t
CK
t
RC =
t
13
CK
Symbol
I
I
I
I
I
I
I
DD 4 W
I
I
DD 3 N
DD 4 R
I
DD 5 A
I
I
DD 2 P
DD 2 F
DD 3 P
DD 0
DD 1
DD 5
DD 6
DD 7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
A
1,040
1,280
1,320
1,400
2,320
3,240
≤ +70°C; V
-335
360
280
400
40
80
40
1,040
1,280
1,320
1,240
2,320
3,200
Max
-262
DD
360
280
400
40
80
40
Electrical Specifications
= V
DD
©2005 Micron Technology, Inc. All rights reserved.
Q = +2.5V ±0.2V
-26A/
1,160
1,160
1,080
2,240
2,800
-265
920
320
240
360
40
80
40
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
15, 18,
15, 18,
14, 37
14, 37
14, 37
14, 39
16, 39
14, 38
39
40
39
14
9