mt8vddt3264hdg-335 Micron Semiconductor Products, mt8vddt3264hdg-335 Datasheet

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mt8vddt3264hdg-335

Manufacturer Part Number
mt8vddt3264hdg-335
Description
128mb, 256mb, 512mb, 1gb X64, Dr 200-pin Ddr Sodimm
Manufacturer
Micron Semiconductor Products
Datasheet
DDR SDRAM SODIMM
MT8VDDT1664HD – 128MB
MT8VDDT3264HD – 256MB
MT8VDDT6464HD – 512MB
MT8VDDT12864HD – 1GB
For component data sheets, refer to Micron’s Web site:
Features
• 200-pin, small-outline dual in-line memory module
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 128MB (16 Meg x 64), 256MB (32 Meg x 64),
• V
• V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 15.625µs
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Dual rank
• Gold edge contacts
Table 1:
PDF: 09005aef80765fab/Source: 09005aef806e1d28
DD8C16_32_64_128x64HD.fm - Rev. D 11/07 EN
(SODIMM)
512MB (64 Meg x 64), and 1GB (128 Meg x 64)
(-40B: V
architecture; two data accesses per clock cycle
received with data—that is, source-synchronous
data capture
operation
(128MB) and 7.8125µs (256MB, 512MB, and 1GB)
maximum average periodic refresh interval
compatibility
DD
DDSPD
Speed
Grade
-26A
-40B
-335
-265
= V
DD
DD
= +2.3V to +3.6V
Q = +2.5V
= V
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
DD
Nomenclature
Notes:
Q = +2.6V)
Industry
PC3200
PC2700
PC2100
PC2100
1. The values of
actual DDR SDRAM device specifications are 15ns.
2
128MB, 256MB, 512MB, 1GB (x64, DR): 200-Pin DDR SODIMM
1
2
CL = 3
400
t
RCD and
Data Rate (MT/s)
CL = 2.5
t
www.micron.com
RP for -335 modules show 18ns to align with industry specifications;
333
333
266
266
1
Figure 1:
Notes: 1. End of life.
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
PCB height: 31.75mm (1.25in)
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 200-pin DIMM (standard)
– 200-pin DIMM (Pb-free)
– 5.0ns (200 MHz), 400 MT/s, CL = 3
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
CL = 2
266
266
266
200
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Not recommended for new designs.
3. Contact Micron for industrial temperature
module offerings.
200-Pin SODIMM (MO-224)
t
(ns)
RCD
15
18
20
20
A
A
3
≤ +85°C)
≤ +70°C)
(ns)
t
15
18
20
20
©2004 Micron Technology, Inc. All rights reserved.
RP
2
(ns)
t
55
60
65
65
2
RC
Marking
Features
None
-40B
-26A
-335
-265
Notes
G
Y
I
1

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mt8vddt3264hdg-335 Summary of contents

Page 1

... RCD and RP for -335 modules show 18ns to align with industry specifications; Micron Technology, Inc., reserves the right to change products or specifications without notice. 1 200-Pin SODIMM (MO-224) 3 ≤ +70°C) A ≤ +85° Not recommended for new designs. ...

Page 2

... Table 4: Part Numbers and Timing Parameters – 256MB Base device: MT46V16M16, Module 2 Part Number Density MT8VDDT3264HDG-40B__ 256MB MT8VDDT3264HDY-40B__ 256MB MT8VDDT3264HDG-335__ 256MB MT8VDDT3264HDY-335__ 256MB MT8VDDT3264HDG-26A__ 256MB MT8VDDT3264HDG-265__ 256MB MT8VDDT3264HDY-265__ 256MB PDF: 09005aef80765fab/Source: 09005aef806e1d28 DD8C16_32_64_128x64HD.fm - Rev. D 11/07 EN 128MB, 256MB, 512MB, 1GB (x64, DR): 200-Pin DDR SODIMM ...

Page 3

... DDR SDRAM Module Configuration Bandwidth 64 Meg x 64 3.2 GB/s 64 Meg x 64 3.2 GB/s 64 Meg x 64 2.7 GB/s 64 Meg x 64 2.7 GB/s 64 Meg x 64 2.1 GB/s 64 Meg x 64 2.1 GB/s 1 1Gb DDR SDRAM Module Configuration Bandwidth 1GB 128 Meg x 64 2.1 GB/s 3 Memory Clock/ Data Rate 5.0ns/400 MT/s 5.0ns/400 MT/s 6.0ns/333 MT/s 6.0ns/333 MT/s 7.5ns/266 MT/s 7.5ns/266 MT/s Memory Clock/ Data Rate 7.5ns/266 MT/s Micron Technology, Inc., reserves the right to change products or specifications without notice. © ...

Page 4

Pin Assignments and Descriptions Table 7: Pin Assignments 200-Pin SODIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol 101 REF DQ19 103 SS 5 DQ0 55 DQ24 105 7 DQ1 57 ...

Page 5

... Data strobe: Output with read data; input with write data. DQS is edge- aligned with read data, center-aligned with write data. Used to capture data. I/O Serial presence-detect data: SDA is a bidirectional pin used to transfer addresses and data into and out of the presence-detect portion of the module. Supply Power supply: +2.5V ±0.2V (-40B: +2.6V ±0.1V). Supply Serial EEPROM positive power supply: +2 ...

Page 6

Functional Block Diagram Figure 2: Functional Block Diagram S1# S0# CS# DQS0 UDQS DM0 UDM DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ U1 DQS1 LDQS DM1 LDM DQ8 DQ DQ9 DQ ...

Page 7

... DDR SDRAM modules incorporate serial presence-detect (SPD). The SPD function is implemented using a 2,048-bit EEPROM. This nonvolatile storage device contains 256 bytes. The first 128 bytes are programmed by Micron to identify the module type and various SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer ...

Page 8

... Electrical Specifications Stresses greater than those listed in Table 9 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the device data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...

Page 9

... (MIN); Address and control inputs change only during active READ or WRITE commands Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks are Value calculated reflects all module ranks in this operating condition. PDF: 09005aef80765fab/Source: 09005aef806e1d28 DD8C16_32_64_128x64HD.fm - Rev. D 11/07 EN ...

Page 10

... (MIN); Address and control inputs change only during active READ or WRITE commands Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks are Value calculated reflects all module ranks in this operating condition. PDF: 09005aef80765fab/Source: 09005aef806e1d28 DD8C16_32_64_128x64HD.fm - Rev. D 11/07 EN ...

Page 11

... (MIN); Address and control inputs change only during active READ or WRITE commands Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks are Value calculated reflects all module ranks in this operating condition. PDF: 09005aef80765fab/Source: 09005aef806e1d28 DD8C16_32_64_128x64HD.fm - Rev. D 11/07 EN ...

Page 12

... READs ( with auto precharge; and control inputs change only during active READ or WRITE commands Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks are Value calculated reflects all module ranks in this operating condition. PDF: 09005aef80765fab/Source: 09005aef806e1d28 DD8C16_32_64_128x64HD ...

Page 13

Serial Presence-Detect Table 15: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...

Page 14

... TYP TYP TYP Pin 1 63.60 (2.504) TYP Back view U7 U6 47.40 (1.87) TYP tive owners. 14 Module Dimensions U9 U4 31.90 (1.25675) 31.60 (1.244) 20.0 (0.787) TYP Pin 199 U5 Pin 2 11.40 (0.45) TYP Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. ...

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