k4s161622d Samsung Semiconductor, Inc., k4s161622d Datasheet - Page 18

• Manufacturer Part Number: k4s161622d
• Description: 512k X 16bit X 2 Banks Synchronous Dram
• Manufacturer: Samsung Semiconductor, Inc.

K4S161622D
8. Burst Stop & Interrupted by Precharge
9. MRS
*Note : 1. t
1) Normal Write (BL=4)
3) Read Interrupted by Precharge (BL=4)
1) Mode Register Set
2. t
3. Number of valid output data after row precharge or burst stop : 1, 2 for CAS latency= 2, 3 respectiviely.
4. PRE : Both banks precharge if necessary.
Read or write burst stop command is valid at every burst length.
MRS can be issued only at both banks precharge state.
DQ(CL3)
DQ(CL2)
RDL
BDL
CMD
DQM
CMD
CMD
: 1 CLK ; Last data in to burst stop delay.
CLK
CLK
CLK
: 1 CLK
DQ
PRE
WR
RD
D
0
Note 4
D
1
tRP
PRE
D
Q
2
0
tRDL
PRE
MRS
D
Q
Q
Note 1
3
1
0
tMRS = 2CLK
1
Note 3
Q
1
2
ACT
2) Write Burst Stop (BL=8)
4) Read Burst Stop (BL=4)
DQ(CL3)
DQ(CL2)
CMD
DQM
CMD
CLK
CLK
DQ
WR
RD
D
0
D
1
STOP
D
Q
2
0
CMOS SDRAM
D
Q
Q
3
1
0
tBDL
1
STOP
D
Note 3
Q
Note 2
4
1
2
D
5