m36l0r7060t1 STMicroelectronics, m36l0r7060t1 Datasheet - Page 12

• Manufacturer Part Number: m36l0r7060t1
• Description: 128 Mbit Multiple Bank, Multilevel, Burst Flash Memory And 64 Mbit Burst Psram, 1.8 V Supply, Multichip Package
• Manufacturer: STMicroelectronics

Signal descriptions
2.19
2.20
2.21
Note:
12/22
V
V
powered independently of the Flash core power supplies, V
V
V
selected by the voltage range applied to the pin.
If V
case a voltage lower than V
while V
the relevant values). V
in its value after the operation has started does not have any effect and Program or Erase
operations continue.
If V
stable until the Program/Erase algorithm is completed.
V
V
I/O buffers) and PSRAM chips. It must be connected to the system ground.
Each Flash memory device in a system should have their supply voltage (V
program supply voltage V
(high frequency, inherently low inductance capacitors should be as close as possible to the
package). See
sufficient to carry the required V
DDQF
PPF
SS
DDQF
PPF
SS
PPF
PPF
is the common ground reference for all voltage measurements in the Flash (core and
is both a Flash control input and a Flash power supply pin. The two functions are
ground
provides the power supply for the Flash I/O pins. This allows all outputs to be
PP
is kept in a low voltage range (0V to V
is in the range of V
Program supply voltage
supply voltage
in the V
Figure 5: AC measurement load
PP1
range enables these functions (see the M58LR128HTB datasheet for
PPF
PPF
is only sampled at the beginning of a Program or Erase; a change
PPH
PPLK
decoupled with a 0.1 µF ceramic capacitor close to the pin
it acts as a power supply pin. In this condition V
PPF
gives an absolute protection against Program or Erase,
program and erase currents.
DDQF
circuit. The PCB track widths should be
) V
PPF
M36L0R7060T1, M36L0R7060B1
is seen as a control input. In this
DDF
and V
CCP
.
DDF
PPF
) and the
must be