ssm3k15amfv TOSHIBA Semiconductor CORPORATION, ssm3k15amfv Datasheet - Page 4

• Manufacturer Part Number: ssm3k15amfv
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
100
10
250
200
150
100
10
50
1
1
0
0.1
1
0
Common source
Ta = 25°C
f = 1 MHz
V GS = 0 V
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mmt, Cu Pad: 0.585 mm
Common source
V DS = 3 V
Ta=25°C
Pulse test
20
Drain-source voltage V
Ambient temperature Ta (°C)
40
Drain current I
10
1
60
|Y
C – V
P
fs
D
| – I
80
– Ta
DS
D
D
100
10
100
(mA)
DS
120
C iss
C oss
C rss
(V)
140
2
)
1000
160
100
4
1000
1000
100
100
0.1
10
10
1
1
0
1
t off
t on
t r
t f
Ta =100 °C
Drain-source voltage V
25 °C
Drain current I
–0.5
10
I
DR
t – I
– V
−25 °C
D
SSM3K15AMFV
DS
D
–1.0
100
Common source
V DD = 5 V
V GS = 0 to 5 V
Ta = 25 °C
R G = 50Ω
Common source
V GS = 0 V
Pulse test
DS
G
(mA)
(V)
2010-07-16
S
D
I
DR
1000
–1.5