ssm3k15amfv TOSHIBA Semiconductor CORPORATION, ssm3k15amfv Datasheet

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ssm3k15amfv

Manufacturer Part Number
ssm3k15amfv
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Load Switching Applications
Absolute Maximum Ratings
Marking
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad:0.585mm
2.5 V drive
Low ON-resistance: R
Drain-Source voltage
Gate-Source voltage
Drain current
Drain dissipation
Channel temperature
Storage temperature range
Note:
1
D I
3
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
2
R
DS(ON)
DS(ON)
DC
Pulse
0.5mm
= 3.6 Ω (max) (@V
= 6.0 Ω (max) (@V
SSM3K15AMFV
0.4mm
Equivalent Circuit
0.45mm
(Ta = 25°C)
0.45mm
Symbol
P
1
V
V
D
T
I
T
GSS
DSS
I
DP
(Note 1)
stg
D
ch
3
GS
GS
−55 to 150
= 4 V)
= 2.5 V)
Rating
2
± 20
100
400
150
150
30
1
(top view)
Unit
mW
mA
°C
°C
V
V
Weight: 1.5 mg (typ.)
JEDEC
JEITA
TOSHIBA
VESM
2
)
SSM3K15AMFV
1
2
1.Gate
2.Source
3.Drain
1.2±0.05
0.8±0.05
2-1L1B
2010-07-16
3
Unit: mm

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ssm3k15amfv Summary of contents

Page 1

... I 400 DP P (Note 1) 150 150 ch −55 to 150 T stg 0.45mm 0.45mm 0.4mm Equivalent Circuit (top view SSM3K15AMFV 1.2±0.05 0.8±0. 1.Gate °C 2.Source VESM °C 3.Drain JEDEC JEITA TOSHIBA 2-1L1B Weight: 1.5 mg (typ 2010-07-16 Unit ― ― ...

Page 2

... OUT Common source Ta = 25°C requires higher voltage than V GS (on) < V < (off (on) vary depending on board material, board area, board thickness D 2 SSM3K15AMFV Min Typ. ⎯ 30 ⎯ 16 ⎯ ⎯ ⎯ ⎯ ⎯ 0.8 ⎯ (Note 2) 35 ⎯ (Note 2) 2.3 ⎯ ...

Page 3

... Gate-source voltage 4 400 Gate-source voltage V 2.0 1.0 0 −50 150 Ambient temperature Ta (°C) 3 SSM3K15AMFV I – − 25 °C Common source Pulse test 1.0 2.0 3.0 4.0 ( – (ON Common source Pulse test 25 ° 100 °C − ...

Page 4

... Ta =100 °C 1 0.1 1000 0 Drain-source voltage V 1000 t off 100 100 1 ( 140 160 4 SSM3K15AMFV I – Common source Pulse test −25 °C S –0.5 –1.0 –1.5 ( – Common source ° ...

Page 5

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3K15AMFV 2010-07-16 ...

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