ssm3k15amfv TOSHIBA Semiconductor CORPORATION, ssm3k15amfv Datasheet - Page 3

• Manufacturer Part Number: ssm3k15amfv
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

300
200
100
400
6
4
2
0
5
3
1
6
5
4
3
2
1
0
−50
0
0
0
Ta = 25 °C
Pulse test
Common source
2.1 V
Drain-source voltage V
Ambient temperature Ta (°C)
0.2
I D = 10 mA / V GS = 2.5 V
100
Drain current I
0
2.3 V
R
R
DS (ON)
DS (ON)
0.4
2.5 V
I
D
10 mA / 4 V
10 V
200
50
– V
– I
2.7 V
DS
D
– Ta
0.6
D
(mA)
Common source
Pulse test
Ta = 25°C
Pulse test
Common source
DS
100
300
3.0 V
4.0 V
V GS = 10 V
V GS = 2.1 V
0.8
(V)
4.0 V
2.3 V
3.0 V
2.7 V
2.5 V
150
400
1.0
3
1000
0.01
100
0.1
12
10
2.0
1.0
10
0
−50
8
6
4
2
0
1
0
0
Ta = 100 °C
25 °C
Gate-source voltage V
Gate-source voltage V
Ambient temperature Ta (°C)
2
1.0
0
R
DS (ON)
I
4
D
− 25 °C
V
th
– V
2.0
50
– Ta
– V
GS
SSM3K15AMFV
GS
6
25 °C
Common source
V DS = 3 V
Pulse test
Common source
V DS = 3 V
I D = 0.1 mA
GS
GS
I D = 10 mA
Common source
Pulse test
100
3.0
Ta = 100 °C
(V)
(V)
2010-07-16
8
− 25 °C
150
4.0
10