ssm6l36tu TOSHIBA Semiconductor CORPORATION, ssm6l36tu Datasheet - Page 7

• Manufacturer Part Number: ssm6l36tu
• Description: Toshiba Field-effect Transistor Silicon N / P Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q2 (P-ch MOSFET)
1000
300
100
100
30
10
50
30
10
5
3
1
-0.1
-8
-6
-4
-2
-1
0
0
Common Source
V DS = -3 V
Ta = 25°C
Common Source
Ta = 25°C
f = 1 MHz
V GS = 0 V
Common Source
I D = -0.33 A
Ta = 25°C
Drain-source voltage V
VDD =-10V
Total Gate Charge Qg (nC)
Dynamic Input Characteristic
Drain current I
-10
-1
1
|Y
C – V
fs
| – I
VDD = - 16 V
DS
D
D
-10
-100
(mA)
DS
2
C oss
C rss
(V)
C iss
-1000
-100
3
7
10000
1000
1000
100
100
0.1
10
10
1
0
-1
t on
G
t f
t r
Common Source
V GS = 0 V
t off
0.2
Drain-source voltage V
S
D
Ta =100 °C
I
DR
Drain current I
0.4
-10
I
DR
t – I
– V
0.6
D
DS
−25 °C
D
-100
0.8
DS
Common Source
V DD = -10 V
V GS = 0 to -2.5 V
Ta = 25 °C
R G = 50Ω
25 °C
SSM6L36TU
(mA)
(V)
1.0
2008-06-05
-1000
1.2