ssm6l36tu TOSHIBA Semiconductor CORPORATION, ssm6l36tu Datasheet - Page 4

• Manufacturer Part Number: ssm6l36tu
• Description: Toshiba Field-effect Transistor Silicon N / P Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1 (Nch MOS FET)
1000
1.5
1.0
0.5
800
600
400
200
0
3
2
1
0
−50
0
0
0
200m A / 4.5 V
Common Source
4.5 V
Gate-source voltage V
Drain-source voltage V
Ambient temperature Ta (°C)
0.2
2
200m A / 2.5 V
0
R
10 V
DS (ON)
R
DS (ON)
4
0.4
100m A / 1.8 V
I
D
50
– V
– V
DS
I D = 50m A / V GS = 1.5 V
– Ta
0.6
GS
6
25 °C
GS
Common Source
Ta = 25 °C
I D =200mA
Common Source
DS
100
200m A / 5.0 V
2.5 V
VGS = 1.2 V
(V)
0.8
Ta = 100 °C
8
(V)
− 25 °C
1.8 V
1.5 V
150
10
1.0
4
1000
0.01
100
0.1
10
1.0
0.5
1
3
2
0
0
−50
1
0
0
Ta = 100 °C
1.5 V
VGS = 4.5V
Common Source
Ta = 25°C
Gate-source voltage V
Ambient temperature Ta (°C)
1.8 V
200
Drain current I
0
− 25 °C
1.0
R
2.5V
DS (ON)
400
I
D
25 °C
V
th
– V
50
– Ta
GS
– I
D
600
D
2.0
(mA)
GS
Common Source
V DS = 3 V
Common Source
V DS = 3 V
I D = 1 mA
100
SSM6L36TU
800
(V)
2008-06-05
150
3.0
1000