ssm6l36tu TOSHIBA Semiconductor CORPORATION, ssm6l36tu Datasheet

ssm6l36tu

Manufacturer Part Number

ssm6l36tu

Description

Toshiba Field-effect Transistor Silicon N / P Channel Mos Type

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.SSM6L36TU.pdf (9 pages)

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○ High-Speed Switching Applications

•

Absolute Maximum Ratings (Ta = 25 °C) (Common to the Q1, Q2)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

Note 1: Total rating

1.5-V drive

Low ON-resistance Q1 N-ch: R

Drain–source voltage

Gate–source voltage

Drain current

Drain–source voltage

Gate–source voltage

Drain current

Drain power dissipation

Channel temperature

Storage temperature range

Absolute Maximum Ratings (Ta = 25°C)

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Mounted on an FR4 board

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm

Characteristic

TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type

Q2 P-ch: R

Pulse

= 1.52Ω (max) (@V

= 1.14Ω (max) (@V

= 0.85Ω (max) (@V

= 0.66Ω (max) (@V

= 0.63Ω (max) (@V

= 3.60Ω (max) (@V

= 2.70Ω (max) (@V

= 1.60Ω (max) (@V

= 1.31Ω (max) (@V

SSM6L36TU

Symbol

(Note 1)

GSS

DSS

stg

−55 to 150

Rating

1000

-330

-660

±10

500

150

-20

±8

)

= 1.5 V)

= 1.8 V)

= 2.5 V)

= 4.5 V)

= 5.0 V)

= -1.5 V)

= -1.8 V)

= -2.8 V)

= -4.5 V)

Unit

°C

Weight: 7.0 mg (typ.)

JEDEC

JEITA

TOSHIBA

UF6

1.Source1

2.Gate1

3.Drain2

SSM6L36TU

2.1±0.1

1.7±0.1

2-2T1B

2008-06-05

4.Source2

5.Gate2

6.Drain1

Unit: mm

Related parts for ssm6l36tu

ssm6l36tu Summary of contents

Page 1

... DSS ±8 V GSS I -330 -660 DP Symbol Rating Unit P (Note 1) 500 150 ch −55 to 150 T stg SSM6L36TU 2.1±0.1 1.7±0 1.Source1 4.Source2 5.Gate2 2.Gate1 3.Drain2 6.Drain1 UF6 V JEDEC - V JEITA - TOSHIBA 2-2T1B Weight: 7.0 mg (typ °C °C 2008-06-05 Unit ...

Page 2

... - -100mA -2 50Ω off =330mA DSF SSM6L36TU Min Typ. ⎯ 20 ⎯ 12 ⎯ ⎯ ⎯ ⎯ ⎯ 0.35 (Note2) 420 840 ⎯ 0.46 ⎯ 0.51 ⎯ 0.66 ⎯ 0.81 ⎯ (Note2) 0.95 ⎯ 46 ⎯ ...

Page 3

... Take this into consideration when using the device. Q2 Usage considerations Let V be the voltage applied between gate and source that causes the drain current ( the SSM6L36TU). Then, for normal switching operation, V than V This relationship can be expressed as: V th. Take this into consideration when using the device. ...

Page 4

... =200mA Common Source 100 °C − 25 ° (V) GS 1.0 0.5 200m −50 100 150 4 SSM6L36TU I – − 25 °C 25 °C Common Source 1.0 2.0 Gate-source voltage V ( – (ON) D Common Source Ta = 25°C 1.8 V 1.5 V VGS = 4.5V 2 ...

Page 5

... Total Gate Charge Qg (nC) 1000 100 10 1 0.1 100 1000 0 (mA) 1000 C iss 100 C oss C rss 10 100 ( SSM6L36TU I – °C Common Source Ta =100 ° −25 °C S –0.5 –1.0 Drain-source voltage V ( – Common Source t off ...

Page 6

... Common Source Ta = 25° 100 °C 1 − 25 ° (V) GS -1.0 -30mA / -1.5V -0.5 0 −50 100 150 6 SSM6L36TU I – Common Source 100 °C 25 °C − 25 °C -1.0 Gate-source voltage V ( – (ON) D Common Source Ta = 25°C -1.5 V -1.8 V -2.8 V VGS = -4 ...

Page 7

... Total Gate Charge Qg (nC) 1000 100 10 1 0.1 -100 -1000 0 (mA) 10000 C iss 1000 C oss C rss 100 10 -10 -100 ( SSM6L36TU I – Common Source =100 °C 25 °C −25 °C 0.2 0.4 0.6 0.8 1.0 Drain-source voltage V ( – Common Source - ...

Page 8

... Q1, Q2 Common P * – 1000 Mounted on an FR4 board. (25.4mm × 25.4mm × 1.6mm, Cu Pad : 645 mm t=10s 800 600 DC 400 200 0 -40 - Ambient temperature Ta (°C) *: Total Rating 100 120 140 160 8 SSM6L36TU 2008-06-05 ...

Page 9

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 SSM6L36TU 20070701-EN GENERAL 2008-06-05 ...

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