ssm6k210fe TOSHIBA Semiconductor CORPORATION, ssm6k210fe Datasheet - Page 3

• Manufacturer Part Number: ssm6k210fe
• Description: Toshiba Field-effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

800
600
400
200
800
600
400
200
0
3
2
1
0
0
−50
0
0
Common Source
Gate-source voltage V
Drain-source voltage V
10 V
Ambient temperature Ta (°C)
0.5
0
R
DS (ON)
R
5.0 V
DS (ON)
I
D
– V
1.0
10
50
– V
DS
– Ta
I D = 0.6 A / V GS = 10 V
GS
4.0V
I D = 0.6 A
Common Source
GS
Common Source
Ta = 25 °C
0.6 A / 4.0V
DS
100
1.5
VGS = 2.5 V
Ta = 100 °C
(V)
(V)
− 25 °C
3.5 V
3.0 V
25 °C
150
20
2
3
0.0001
0.001
800
600
400
200
0.01
0.1
3.0
2.0
1.0
10
0
1
−50
0
0
0
VGS = 10 V
Common Source
Ta = 25°C
4.0V
Common Source
V DS = 5 V
Gate-source voltage V
Ambient temperature Ta (°C)
Ta = 100 °C
Drain current I
1
0
R
1
DS (ON)
I
D
− 25 °C
V
– V
th
2
50
– Ta
GS
25 °C
– I
D
D
2
(A)
GS
Common Source
V DS = 5V
I D = 1 mA
SSM6K210FE
100
3
(V)
2008-02-04
4
150
3