ssm6k210fe TOSHIBA Semiconductor CORPORATION, ssm6k210fe Datasheet
ssm6k210fe
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ssm6k210fe Summary of contents
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... Unit DSS ± GSS (Note1) 500 mW D °C T 150 ch −55 to 150 °C T stg 2 ) Equivalent Circuit (top view SSM6K210FE Unit: mm 1.2.5.6 : Drain 3. : Gate 4. : Source ES6 JEDEC ― JEITA ― 2-2N1A TOSHIBA Weight: 3mg (typ.) 2008-02-04 ...
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... V DD Notice on Usage Let V be the voltage applied between gate and source that causes the drain current (I th SSM6K210FE). Then, for normal switching operation This relationship can be expressed as: V th. Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge ...
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... Gate-source voltage V 800 Common Source Ta = 25°C 600 400 4.0V 200 25 °C VGS = 10 V − 25 ° 3.0 2.0 1.0 0 −50 150 Ambient temperature Ta (°C) 3 SSM6K210FE I – 100 °C − 25 °C 25 ° ( – (ON Drain current I (A) ...
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... C iss C oss rss 100 0.01 (V) 1 0.8 0.6 DC 0.4 0 Ambient temperature Ta (°C) 4 SSM6K210FE I – °C −25 °C -0.5 -1.0 -1.5 ( – Common Source 4 ° Ω 0 Drain current I ...
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... Single pulse Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm 100 10 1 0.001 0.01 0.1 Pulse width – 100 (s) w SSM6K210FE 1000 2008-02-04 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM6K210FE 20070701-EN 2008-02-04 ...