ssm6k210fe TOSHIBA Semiconductor CORPORATION, ssm6k210fe Datasheet - Page 2

• Manufacturer Part Number: ssm6k210fe
• Description: Toshiba Field-effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Switching Time Test Circuit
Notice on Usage
SSM6K210FE). Then, for normal switching operation, V
V
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Electrical Characteristics
th.
Let V
(a) Test Circuit
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Drain-source forward voltage
Note 2: Pulse test
This relationship can be expressed as: V
4.0 V
th
0
be the voltage applied between gate and source that causes the drain current (I
10 μs
Characteristic
IN
Turn-on time
Turn-off time
V
DD
OUT
(Ta = 25°C)
V
R
Symbol
(BR) DSS
DS (ON)
⏐Y
V
I
I
C
C
C
Q
Q
GSS
V
R
D.U. ≤ 1%
V
Common Source
Ta = 25°C
DSS
V
Q
t
t
DSF
oss
on
off
rss
iss
DD
IN
GS(off)
gs
gd
G
th
fs
g
⏐
: t
= 10 Ω
= 15 V
r
, t
f
< 5 ns
< V
I
V
V
V
V
I
I
V
V
V
V
V
I
D
D
D
D
DS
GS
DS
DS
DS
DS
GS
DD
GS
= 1 mA, V
= 0.6 A, V
= 0.6 A, V
= -1.4 A, V
th
GS(on)
 = ±16 V, V
= 30 V, V
= 5 V, I
= 5 V, I
= 15 V, V
= 15 V, I
= 10 V
= 15 V, I
= 0 to 4.0 V, R
< V
2
GS(on).
must be higher than V
Test Condition
D
D
GS
GS
GS
GS
D
D
(b) V
(c) V
= 1 mA
= 0.6 A
GS
GS
= 0.6 A,
= 1.5 A
= 0 V
= 10 V
= 4.0 V
= 0 V
DS
= 0 V
= 0 V, f = 1 MHz
G
= 0 V
OUT
IN
= 10 Ω
4.0 V
V
0 V
V
DD
DS (ON)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
th,
and V
D
) to below (1 mA for the
0.73
Min
1.1
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
GS(off)
on
10%
t
-0.85
SSM6K210FE
Typ.
r
1.45
12.0
171
271
10%
2.8
1.6
1.2
6.9
90%
57
33
12
⎯
⎯
⎯
⎯
must be lower than
2008-02-04
90%
t
Max
228
371
-1.2
off
2.6
±1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
t
f
Unit
mΩ
nC
μA
μA
pF
ns
V
V
S
V