ssm6n29tu TOSHIBA Semiconductor CORPORATION, ssm6n29tu Datasheet - Page 4

• Manufacturer Part Number: ssm6n29tu
• Description: Toshiba Field-effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
10.0
1000
800
600
400
200
1.0
0.1
100
10
0
0.01
0.1
0
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25 °C
b
a
20
Ambient Temperature Ta(°C)
Drain-Source Voltage V
- 25 °C
40
25 °C
Drain Current I
0.1
1
a : Mounted on an FR4 board.
b : Mounted on a ceramic board.
60
|Yfs| - I
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
C - V
P
Ta = 85 °C
D
80 100 120 140 160
DS
- Ta
D
Common Source
V
Ta = 25 °C
DS
D
(A)
= 3 V
10
1
DS
(V)
Ciss
Coss
Crss
100
10
4
0.001
1000
1000
0.01
100
100
0.1
10
10
10
1
1
1
0.001
0.01
0
ton
Common Source
VGS = 0 V
Ta = 25 °C
G
toff
tf
tr
0.01
-0.2
Drain-Source Voltage V
Ta = 85 °C
S
D
IDR
0.1
0.1
Drain Current I
Pulse Width tw (S)
25 °C
-0.4
I
t - I
Single pulse
a : Mounted on a ceramic board.
b : Mounted on an FR4 board.
c : Mounted on an FR4 Board
DR
Rth - tw
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
(25.4mm×25.4mm×1.6mm)
Cu Pad :0.45mm×0.8mm×3
D
- V
1
DS
c
b
a
-0.6
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25 °C
D
(A)
10
- 25 °C
1
SSM6N29TU
DS
-0.8
(V)
2007-11-01
100
1000
10
-1