ssm6n29tu TOSHIBA Semiconductor CORPORATION, ssm6n29tu Datasheet - Page 3

• Manufacturer Part Number: ssm6n29tu
• Description: Toshiba Field-effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

200
180
160
140
120
100
200
180
160
140
120
100
80
60
40
20
80
60
40
20
5
4
3
2
1
0
0
0
0
0
0
ID = 0.2 A
1
0.2
Drain-Source Voltage V
Gate-Source Voltage V
2
V
1
0.5 A
1.8 V
2.5 V
GS
10
3
Drain Current I
= 4 V
1 A
R
R
0.4
4.0
DS
4
DS
2
I
D
(ON) - I
(ON) - V
- V
5
DS
2.5
Common Source
Ta = 25 °C
0.6
Common Source
Ta = 25 °C
Common Source
Ta = 25 °C
V
6
D
3
GS
GS
D
(A)
GS
7
DS
= 1.2 V
(V)
(V)
0.8
8
4
1.5
9
1.8
10
5
1
3
0.0001
0.001
0.01
300
250
200
150
100
0.1
0.8
0.6
0.4
0.2
10
50
1
0
1
0
-60 -40 -20
-60 -40 -20
0
Common Source
Ta = 85 °C
2.5 V , 0.5 A
Ambient Temperature Ta( ℃ )
Ambient Temperature Ta(°C)
Gate-Source Voltage V
0
0
R
20 40 60 80 100 120 140 160
20 40 60 80 100 120 140 160
DS
- 25 °C
I
Vth - Ta
D
(ON) - Ta
- V
25 °C
V
1
GS
GS
= 4 V , I
1.8 V , 0.2 A
Common Source
ID = 1 mA
VDS = 3 V
Common Source
V
DS
SSM6N29TU
= 3 V
D
GS
= 1 A
(V)
2007-11-01
2