ssm6n29tu TOSHIBA Semiconductor CORPORATION, ssm6n29tu Datasheet
ssm6n29tu
Manufacturer Part Number
ssm6n29tu
Description
Toshiba Field-effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.SSM6N29TU.pdf
(5 pages)
High-Speed Switching Applications
•
•
•
Absolute Maximum Ratings
Electrical Characteristics
1.8 V drive
N-ch 2-in-1
Low ON-resistance:
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note:
Note 1: Mounted on an FR4 board. (total dissipation)
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Drain-source forward voltage
Note 2 : Pulse test
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm
Characteristic
Characteristic
Turn-on time
Turn-off time
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
DC
Pulse
R
R
R
on
on
on
= 235 mΩ (max) (@V
= 178 mΩ (max) (@V
= 143 mΩ (max) (@V
(Ta = 25°C) (Q1 , Q2 Common)
(Ta = 25 °C) (Q1 , Q2 Common)
V
V
SSM6N29TU
P
R
Symbol
(BR) DSS
(BR) DSX
Symbol
D (Note 1)
⏐Y
DS (ON)
V
I
I
C
V
C
C
DSS
GSS
V
V
t
t
T
DSF
T
I
oss
on
off
GSS
rss
iss
I
DP
th
fs
DS
stg
D
ch
⏐
I
I
V
V
V
V
I
I
I
V
V
V
V
V
I
D
D
D
D
D
D
DS
GS
DS
DS
DS
DS
DS
DD
GS
GS
GS
GS
= 1 mA, V
= 1 mA, V
= 0.6 A, V
= 0.4 A, V
= 0.2 A, V
= − 0.8 A, V
− 55 to 150
= 20 V, V
= 3 V, I
= 3 V, I
= 10 V, V
= 10 V, V
= 10 V, V
= 10 V, I
= ± 12 V, V
= 0 to 2.5 V, R
= 1.8 V)
= 2.5 V)
= 4.0 V)
Rating
± 12
500
150
0.8
1.6
20
1
2
D
D
Test Conditions
GS
GS
GS
GS
GS
)
D
= 1 mA
= 0.6 A
GS
GS
GS
GS
GS
= 0.25 A,
= 0
= − 12 V
DS
= 4.0 V
= 2.5 V
= 1.8 V
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0 V
= 0
G
= 4.7 Ω
Unit
mW
°C
°C
V
V
A
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
UF6
Weight: 7 mg (typ.)
JEDEC
JEITA
TOSHIBA
1.Source1
2.Gate1
3.Drain2
Min
0.4
2.3
20
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
2
3
− 0.8
Typ.
3.75
116
134
160
268
44
34
16
⎯
⎯
⎯
⎯
⎯
SSM6N29TU
9
2.1±0.1
1.7±0.1
2-2T1B
2007-11-01
4.Source2
5.Gate2
6.Drain1
−
―
―
Max
143
178
235
± 1
1.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.15
1
Unit: mm
6
5
4
Unit
mΩ
μA
μA
pF
pF
pF
ns
V
V
S
V
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ssm6n29tu Summary of contents
Page 1
... 0. 2 4.7 Ω off = − 0 DSF SSM6N29TU 2.1±0.1 1.7±0 1.Source1 4.Source2 2.Gate1 5.Gate2 3.Drain2 6.Drain1 UF6 JEDEC ― JEITA ― TOSHIBA 2-2T1B Weight (typ.) Min Typ. ...
Page 2
... IN OUT (c) V OUT V DD Equivalent Circuit (top view requires a higher voltage than V GS (on) < V < (off (on). 2 SSM6N29TU 2 (ON off = 1 mA for D and V requires a lower th, GS (off) ...
Page 3
... Common Source 250 200 150 100 -60 -40 -20 1 0.8 0.6 0.4 0 -60 -40 -20 3 SSM6N29TU °C 25 ° °C Common Source Gate-Source Voltage V ( (ON 1 0 ...
Page 4
... ° 0.1 0.01 0.001 10 0 1000 toff Ciss 100 tf ton 10 Coss tr Crss 1 100 0.01 1000 100 10 1 0.001 0.01 4 SSM6N29TU IDR 25 ° ° °C -0.2 -0.4 -0.6 -0.8 -1 Drain-Source Voltage V ( Common Source VDD = 10 V VGS = °C 0 Drain Current I ...
Page 5
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM6N29TU 20070701-EN GENERAL 2007-11-01 ...