ssm6n36tu TOSHIBA Semiconductor CORPORATION, ssm6n36tu Datasheet - Page 4

• Manufacturer Part Number: ssm6n36tu
• Description: Toshiba Field-effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
3000
1000
300
100
100
10
30
10
50
30
10
8
6
4
2
0
5
3
1
0.1
1
0
Common Source
Ta = 25°C
f = 1 MHz
V GS = 0 V
Common Source
I D = 0.5 A
Ta = 25°C
Common Source
V DS = 3 V
Ta = 25°C
Drain-source voltage V
Dynamic Input Characteristic
Total Gate Charge Qg (nC)
V DD = 10 V
Drain current I
10
1
1
|Y
C – V
fs
| – I
V DD = 16 V
DS
D
D
10
100
(mA)
2
DS
C oss
C rss
(V)
C iss
1000
100
3
4
*: Total Rating
1000
1000
1000
100
100
0.1
800
600
400
200
10
10
1
0
0
-40
1
t on
t f
t r
t=10s
DC
t off
-20
Ta =100 °C
25 °C
Drain-source voltage V
Ambient temperature Ta (°C)
0
Drain current I
20
–0.5
10
P
I
40
DR
D
t – I
Mounted on a FR4 board.
(25.4mm × 25.4mm × 1.6mm ,
Cu Pad: 645 mm
* – Ta
– V
−25 °C
60
D
DS
80
D
–1.0
100
Common Source
V GS = 0 V
100
Common Source
V DD = 10 V
V GS = 0 to 2.5 V
Ta = 25 °C
R G = 4.7 Ω
G
DS
(mA)
SSM6N36TU
2
)
120
(V)
S
D
2008-02-29
140
I
DR
–1.5
1000
160