ssm6n36tu TOSHIBA Semiconductor CORPORATION, ssm6n36tu Datasheet

ssm6n36tu

Manufacturer Part Number

ssm6n36tu

Description

Toshiba Field-effect Transistor Silicon N-channel Mos Type

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.SSM6N36TU.pdf (5 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SSM6N36TU

Manufacturer:

TOSHIBA/东芝

Quantity:

20 000

Current page: 1 of 5
Download datasheet (195Kb)

○ High-Speed Switching Applications

•

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Marking

1.5-V drive

Low ON-resistance: R

Drain–source voltage

Gate–source voltage

Drain current

Drain power dissipation

Channel temperature

Storage temperature

Note: Using continuously under heavy loads (e.g. the application of high

Note 1: Total rating

temperature/current/voltage

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Mounted on an FR4 board

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm

Characteristic

: R

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

= 1.52 Ω (max) (@V

= 1.14 Ω (max) (@V

= 0.85 Ω (max) (@V

= 0.66 Ω (max) (@V

= 0.63 Ω (max) (@V

Pulse

and

SSM6N36TU

Symbol

Equivalent Circuit

(Note 1)

GSS

DSS

stg

the

significant

= 1.5V)

= 1.8V)

= 2.5V)

= 4.5V)

= 5.0V)

−55 to 150

Rating

1000

± 10

500

150

)

change

(top view)

Unit

°C

Weight: 7.0 mg (typ.)

JEDEC

JEITA

TOSHIBA

UF6

1.Source1

2.Gate1

3.Drain2

SSM6N36TU

2.1±0.1

1.7±0.1

2-2T1B

2008-02-29

―

4.Source2

5.Gate2

6.Drain1

Unit: mm

Related parts for ssm6n36tu

ssm6n36tu Summary of contents

Page 1

... D °C T 150 ch −55 to 150 °C T stg and the significant change 2 ) Equivalent Circuit (top view SSM6N36TU 2.1±0.1 1.7±0 1.Source1 4.Source2 2.Gate1 5.Gate2 3.Drain2 6.Drain1 UF6 JEDEC ― JEITA ― in TOSHIBA 2-2T1B Weight: 7.0 mg (typ.) 2008-02-29 Unit ...

Page 2

... V DD Usage Considerations Let V be the voltage applied between gate and source that causes the drain current (I th SSM6N36TU). Then, for normal switching operation This relationship can be expressed as: V th. Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge ...

Page 3

... Gate-source voltage V 3 Common Source Ta = 25°C 2 1 VGS = 4.5V − 25 ° 1.0 0.5 0 −50 150 Ambient temperature Ta (°C) 3 SSM6N36TU I – − 25 °C 25 °C Common Source 1.0 2.0 3.0 ( – (ON) D 2.5V 400 600 800 1000 200 Drain current I ...

Page 4

... C oss C rss 100 1 (V) 1000 t=10s 800 600 DC 400 200 0 3 -40 -20 *: Total Rating 4 SSM6N36TU I – Common Source −25 °C S –0.5 –1.0 –1.5 ( – Common Source 2 ° ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM6N36TU 20070701-EN GENERAL 2008-02-29 ...

Related keywords

ssm6n36tu datasheet
ssm6n36tu data sheet
ssm6n36tu pdf datasheet
ssm6n36tu component
ssm6n36tu part
ssm6n36tu distributor
ssm6n36tu RoHS
ssm6n36tu datasheet download