ssm6n36tu TOSHIBA Semiconductor CORPORATION, ssm6n36tu Datasheet - Page 2

• Manufacturer Part Number: ssm6n36tu
• Description: Toshiba Field-effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Switching Time Test Circuit
Usage Considerations
SSM6N36TU). Then, for normal switching operation, V
V
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Electrical Characteristics
th.
Let V
(a) Test Circuit
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Switching time
Drain-source forward voltage
Note2: Pulse test
This relationship can be expressed as: V
2.5 V
th
0
be the voltage applied between gate and source that causes the drain current (I
10 μs
Characteristic
IN
Turn-on time
Turn-off time
V
DD
OUT
(Ta = 25°C) (Q1, Q2 Common)
(Q1, Q2 Common)
V
V
R
V
R
D.U. ≤ 1%
V
Common Source
Ta = 25°C
Symbol
(BR) DSS
(BR) DSX
DS (ON)
DD
IN
GS(off)
V
G
I
I
C
|Y
C
C
GSS
DSS
Q
V
Q
t
t
Q
DSF
: t
oss
on
off
= 50 Ω
rss
iss
th
fs
gs
gd
g
= 10 V
r
|
, t
f
< 5 ns
< V
GS(on)
I
I
V
V
V
V
I
I
I
I
I
V
V
V
V
V
I
th
D
D
D
D
D
D
D
D
DS
GS
DS
DS
DS
DS
GS
DD
GS
= 1 mA, V
= 1 mA, V
= 200 mA, V
= 200 mA, V
= 200 mA, V
= 100 mA, V
= 50 mA, V
= -0.5 A, V
< V
=20 V, V
= 3 V, I
= 3 V, I
= 10 V, V
= 10V, I
= ±10 V, V
= 4.0 V
= 10 V, I
= 0 to 2.5 V, R
2
(b) V
(c) V
GS(on).
must be higher than V
Test Condition
D
D
GS
GS
D
GS
D
GS
OUT
GS
IN
= 1 mA
= 200 mA
GS
= 0.5 A
GS
GS
GS
GS
DS
= 200 mA
= 0
= - 10 V
= 0 V
= 0
= 1.5 V
= 0, f = 1 MHz
= 5.0 V (Note2)
= 4.5 V (Note2)
= 2.5 V (Note2)
= 1.8 V (Note2)
= 0
G
= 50 Ω
2.5 V
0 V
V
V
(Note2)
(Note2)
(Note2)
DD
DS (ON)
th,
and V
D
0.35
Min
420
) to below (1 mA for the
20
12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
on
10%
GS(off)
t
r
10%
90%
-0.88
Typ.
0.46
0.51
0.66
0.81
0.95
10.8
1.23
0.60
0.63
must be lower than
840
7.3
SSM6N36TU
46
30
75
⎯
⎯
⎯
⎯
⎯
90%
t
off
2008-02-29
Max
0.63
0.66
0.85
1.14
1.52
-1.2
1.0
⎯
⎯
±1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
1
f
Unit
mS
μA
μA
nC
pF
ns
V
V
Ω
V