ssm6n35fe TOSHIBA Semiconductor CORPORATION, ssm6n35fe Datasheet - Page 4

• Manufacturer Part Number: ssm6n35fe
• Description: Toshiba Field-effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
0.01
100
5000
3000
1000
0.1
10
500
300
100
1.0
0.5
1
50
30
10
0
0
0.1
−50
V
G
Common Source
t off
t on
t f
t r
GS
= 0 V
Ta = 100°C
Drain–source voltage V
S
Ambient temperature Ta (°C)
D
I
DR
Drain current I
1
−0.5
0
I
DR
V
– V
th
t – I
10
50
– Ta
−25°C
DS
D
25°C
D
−1
Common Source
V DD = 3 V
V GS = 0 to 2.5 V
Ta = 25°C
DS
(mA)
Common Source
I D = 1 mA
V DS = 3 V
100
100
(V)
−1.5
1000
150
4
*: Total Rating
1000
250
200
150
100
500
300
100
100
50
50
30
10
50
10
0
5
3
1
0
5
1
1
Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm
0.1
Common Source
V GS = 0 V
f = 1 MHz
Ta = 25°C
20
Drain–source voltage V
Ambient temperature Ta (°C)
40
0.5
Drain current I
10
1
60
P
⎪Y
C – V
D
fs
* – Ta
80
⎪ – I
DS
5
D
100
D
100
10
(mA)
Common Source
V DS = 3 V
Ta = 25°C
DS
120
SSM6N35FE
C oss
C iss
C rss
(V)
140
2
2008-03-10
× 6)
50
160
1000
100