ssm6n35fe TOSHIBA Semiconductor CORPORATION, ssm6n35fe Datasheet - Page 3

• Manufacturer Part Number: ssm6n35fe
• Description: Toshiba Field-effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

400
300
200
100
10
0
10
5
0
5
0
0
1
0
V GS = 1.2 V
1.5 V
2.5 V
4 V
Common Source
Ta = 25°C
10 V
Drain–source voltage V
Gate–source voltage V
2
0.5
Drain current I
4 V
10
R
R
DS (ON)
2.5 V
DS (ON)
I
4
D
– V
1
DS
– V
– I
D
6
D
GS
100
25°C
(mA)
Common Source
Ta = 25°C
DS
Common Source
I D = 5 mA
GS
1.5
V GS = 1.2 V
Ta = 100°C
(V)
8
(V)
1.8 V
1.5 V
−25°C
1000
2
10
3
1000
0.01
100
10
0.1
10
10
5
0
−50
1
5
0
0
0
V GS = 1.2 V, I D = 5 mA
1.5 V, 5 mA
Common Source
V DS = 3 V
Common Source
2.5 V, 50 mA
4 V, 50 mA
25°C
Ta = 100°C
Gate–source voltage V
Gate–source voltage V
Ambient temperature Ta (°C)
2
0
−25°C
1
R
R
DS (ON)
DS (ON)
4
I
D
– V
50
GS
– V
– Ta
6
GS
2
25°C
Common Source
I D = 50 mA
GS
GS
100
SSM6N35FE
Ta = 100°C
8
(V)
(V)
2008-03-10
−25°C
150
10
3