ssm6n35fe TOSHIBA Semiconductor CORPORATION, ssm6n35fe Datasheet

ssm6n35fe

Manufacturer Part Number

ssm6n35fe

Description

Toshiba Field-effect Transistor Silicon N-channel Mos Type

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.SSM6N35FE.pdf (5 pages)

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○ High-Speed Switching Applications

○ Analog Switch Applications

•

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Marking

Note: Using continuously under heavy loads (e.g. the application of high

Note 1: Total rating

1.2-V drive

N-ch 2-in-1

Low ON-resistance: R

Drain–source voltage

Gate–source voltage

Drain current

Drain power dissipation

Channel temperature

Storage temperature

temperature/current/voltage

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

K Z

Mounted on an FR4 board

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm

Characteristic

: R

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

= 8 Ω (max) (@V

= 4 Ω (max) (@V

= 3 Ω (max) (@V

= 20 Ω (max) (@V

Pulse

Equivalent Circuit

and

SSM6N35FE

Symbol

(Note 1)

GSS

DSS

stg

the

= 1.5 V)

= 2.5 V)

= 4.0 V)

= 1.2 V)

significant

−55 to 150

Rating

±10

180

360

150

(top view)

× 6)

change

Unit

°C

Weight: 3.0 mg (typ.)

JEDEC

JEITA

TOSHIBA

ES6

1.Source1

2.Gate1

3.Drain2

SSM6N35FE

1.2±0.05

1.6±0.05

2-2N1A

2008-03-10

4.Source2

5.Gate2

6.Drain1

Unit: mm

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ssm6n35fe Summary of contents

Page 1

... D °C T 150 ch −55 to 150 °C T stg and the significant change 2 × 6) Equivalent Circuit (top view SSM6N35FE 1.6±0.05 1.2±0. 4.Source2 1.Source1 V 5.Gate2 2.Gate1 6.Drain1 ES6 3.Drain2 JEDEC - JEITA - TOSHIBA 2-2N1A Weight: 3.0 mg (typ.) in 2008-03-10 Unit ...

Page 2

... Ta = 25°C Usage Considerations Let V be the voltage applied between gate and source that causes the drain current (I th SSM6N35FE). Then, for normal switching operation This relationship can be expressed as: V th. Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge ...

Page 3

... Gate–source voltage V 10 Common Source −50 1000 Ambient temperature Ta (°C) 3 SSM6N35FE I – −25° ( – (ON) GS Common Source 25° 100°C − ...

Page 4

... Drain–source voltage V 250 Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm 200 150 100 50 0 1000 Total Rating Ambient temperature Ta (°C) 4 SSM6N35FE ⎪Y ⎪ – Common Source 25°C 10 100 1000 Drain current I (mA – V ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM6N35FE 20070701-EN GENERAL 2008-03-10 ...

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