si7909dn-t1 Vishay, si7909dn-t1 Datasheet - Page 4

• Manufacturer Part Number: si7909dn-t1
• Description: Dual P-channel 12-v D-s Mosfet
• Manufacturer: Vishay

Si7909DN
Vishay Siliconix
TYPICAL CHARACTERISTICS T
www.vishay.com
4
–0.1
–0.2
0.4
0.3
0.2
0.1
0.0
0.01
–50
0.1
2
1
10
–4
–25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Threshold Voltage
T
I
D
J
– Temperature (
= 700 µA
25
10
–3
Single Pulse
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
˚
C)
A
0.01
100
100
0.1
= 25°C, unless otherwise noted
10
10
1
0.1
–2
Safe Operating Area, Junction-To-Ambient
r
DS(on)
125
Limited
I
D(on)
New Product
Single Pulse
T
Limited
Square Wave Pulse Duration (sec)
A
150
V
= 25
DS
˚
– Drain-to-Source Voltage (V)
C
10
BV
1
–1
DSS
Limited
I
DM
Limited
10
50
40
30
20
10
0.001
1
0
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
Single Pulse Power, Juncion-To-Ambient
0.01
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0.1
P
DM
JM
Time (sec)
– T
t
A
1
S-51210–Rev. C, 27-Jun-05
= P
t
1
Document Number: 71996
2
DM
Z
thJA
100
thJA
t
t
1
2
(t)
10
= 65
˚
C/W
100
600
600