si7909dn-t1 Vishay, si7909dn-t1 Datasheet - Page 3

• Manufacturer Part Number: si7909dn-t1
• Description: Dual P-channel 12-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS T
Document Number: 71996
S-51210–Rev. C, 27-Jun-05
0.12
0.09
0.06
0.03
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
V
I
Source-Drain Diode Forward Voltage
GS
D
DS
= 7.7 A
0.2
On-Resistance vs. Drain Current
= 1.8 V
= 6 V
4
4
V
SD
Q
g
– Source-to-Drain Voltage (V)
– Total Gate Charge (nC)
I
0.4
T
D
J
– Drain Current (A)
Gate Charge
= 150
8
8
˚
0.6
C
12
12
0.8
A
V
V
T
= 25°C, unless otherwise noted
GS
GS
J
16
= 25
16
= 2.5 V
= 4.5 V
1.0
˚
C
New Product
20
1.2
20
2400
1800
1200
600
0.12
0.10
0.08
0.06
0.04
0.02
0.00
1.3
1.2
1.1
1.0
0.9
0.8
0
–50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
–25
V
I
D
I
GS
D
2
= 7.7 A
V
= 3 A
C
V
DS
= 4.5 V
1
rss
GS
T
J
0
– Drain-to-Source Voltage (V)
– Junction Temperature (
– Gate-to-Source Voltage (V)
4
Capacitance
25
C
2
oss
I
D
6
50
= 7.7 A
Vishay Siliconix
C
iss
3
75
Si7909DN
8
www.vishay.com
˚
100
C)
4
10
125
12
150
5
3