si7909dn-t1 Vishay, si7909dn-t1 Datasheet
si7909dn-t1
Related parts for si7909dn-t1
si7909dn-t1 Summary of contents
Page 1
... PowerPAK 1212 Bottom View Ordering Information: Si7909DN-T1 Si7909DN–T1–E3 (Lead (Pb)–free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150°C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...
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... Si7909DN Vishay Siliconix SPECIFICATIONS T = 25°C, unless otherwise noted J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...
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... Document Number: 71996 S-51210–Rev. C, 27-Jun-05 New Product = 25°C, unless otherwise noted A 2400 1800 1200 ˚ 0.8 1.0 1.2 Si7909DN Vishay Siliconix C iss C oss 600 C rss – Drain-to-Source Voltage (V) DS Capacitance 1.2 1.1 1 ...
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... Si7909DN Vishay Siliconix TYPICAL CHARACTERISTICS T 0 700 µA D 0.3 0.2 0.1 0.0 –0.1 –0.2 –50 – – Temperature ( J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 New Product = 25°C, unless otherwise noted ...
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... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71996. Document Number: 71996 S-51210–Rev. C, 27-Jun-05 New Product = 25°C, unless otherwise noted A –3 – Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Si7909DN Vishay Siliconix – www.vishay.com 5 ...