si7892bdp Vishay, si7892bdp Datasheet - Page 3

• Manufacturer Part Number: si7892bdp
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73228
S-80440-Rev. C, 03-Mar-08
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0.000
0.1
60
10
6
5
4
3
2
1
0
1
0.0
0.0
0
I
D
Source-Drain Diode Forward Voltage
= 25 A
0.2
On-Resistance vs. Drain Current
7.4
10
T
V
J
SD
= 150 °C
Q
g
- Source-to-Drain Voltage (V)
0.4
- Total Gate Charge (nC)
I
D
V
Gate Charge
V
V
14.8
DS
GS
- Drain Current (A)
GS
20
= 15 V
= 4.5 V
= 10 V
0.6
V
DS
= 10 V
22.2
30
0.8
V
T
DS
J
= 25 °C
= 20 V
29.6
40
1.0
37.0
1.2
50
0.030
0.025
0.020
0.015
0.010
0.005
0.000
1.6
1.4
1.2
1.0
0.8
0.6
4500
4000
3500
3000
2500
2000
1500
1000
500
- 50
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
V
I
D
GS
= 25 A
C
= 10 V
rss
2
4
T
0
V
V
J
GS
DS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
C
4
oss
8
I
50
D
Vishay Siliconix
= 25 A
Si7892BDP
75
C
12
6
iss
100
www.vishay.com
16
8
125
150
10
20
3