si7892bdp Vishay, si7892bdp Datasheet - Page 2

• Manufacturer Part Number: si7892bdp
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si7892BDP
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
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2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
V
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery
Reverse Recovery Charge
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
b
50
40
30
20
10
0
0.0
0.2
a
a
V
DS
V
Output Characteristics
GS
a
- Drain-to-Source Voltage (V)
J
= 10 thru 4 V
= 25 °C, unless otherwise noted
0.4
a
ΔV
Symbol
ΔV
R
V
I
t
t
0.6
GS(th)/Tj
I
I
C
D(on)
DS(on)
V
C
C
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
Q
R
DS/Tj
t
oss
t
SD
t
iss
rss
rr
fs
gs
gd
r
f
rr
g
g
3 V
0.8
V
V
I
DS
V
D
DS
DS
≅ 1 A, V
I
F
= 15 V, V
= 30 V, V
V
V
V
1.0
V
V
V
= 2.9 A, di/dt = 100 A/µs
= 15 V, V
V
V
I
DS
DS
S
DD
DS
DS
GS
GS
DS
Test Conditions
= 4.5 A, V
= V
= 0 V, V
= 30 V, V
≥ 5 V, V
= 15 V, R
= 4.5 V, I
= 10 V, I
= 15 V, I
I
GEN
D
GS
= 250 µA
GS
GS
SS
, I
= 10 V, R
= 4.5 V, I
= 0 V, T
D
GS
GS
= 0 V, f = 1 Hz
GS
D
D
D
= 250 µA
GS
L
= ±20 V
= 25 A
= 25 A
= 10 V
= 22 A
= 15 Ω
= 0 V
= 0 V
J
G
D
= 55°C
= 25 A
= 6 Ω
50
40
30
20
10
0
0.0
0.5
Min.
1.0
0.5
V
30
1.0
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
1.5
0.0034
0.0047
3775
Typ.
- 6.5
0.75
11.4
630
295
8.1
1.2
28
85
27
20
13
62
20
40
40
2.0
T
S-80440-Rev. C, 03-Mar-08
C
Document Number: 73228
= 125 °C
25 °C
2.5
0.0042
0.0057
± 100
Max.
100
3.0
1.2
2.0
40
30
20
35
60
60
1
5
3.0
3.5
- 55 °C
mV/°C
Unit
nC
nC
nA
µA
pF
ns
Ω
Ω
V
A
S
V
4.0