si7892bdp Vishay, si7892bdp Datasheet

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si7892bdp

Manufacturer Part Number
si7892bdp
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
si7892bdp-T1-E3
Manufacturer:
VISHAY
Quantity:
256
Part Number:
si7892bdp-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
si7892bdp-T1-E3
Quantity:
828
Company:
Part Number:
si7892bdp-T1-E3
Quantity:
70 000
Part Number:
si7892bdp-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
42 200
Part Number:
si7892bdp-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73228
S-80440-Rev. C, 03-Mar-08
Ordering Information: Si7892BDP-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
30
(V)
8
6.15 mm
D
7
D
0.0057 at V
0.0042 at V
6
D
PowerP AK SO-8
R
Bottom View
Si7892BDP-T1-GE3 (Lead (Pb)-free and Halogen-free)
5
DS(on)
D
GS
GS
(Ω)
1
J
a
= 4.5 V
= 10 V
S
= 150°C)
a
2
S
N-Channel 30-V (D-S) MOSFET
3
S
a
5.15 mm
4
I
D
25
22
G
(A)
a
b, c
A
Q
= 25 °C, unless otherwise noted
g
Steady State
Steady State
L = 0.1 mH
T
T
T
T
(Typ.)
27
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free available
• TrenchFET
• New Low Thermal Resistance PowerPAK
• Low Gate Charge
• 100 % R
• Synchronous Rectifier
Symbol
Symbol
T
R
R
Package with Low 1.07 mm Profile
J
V
V
E
I
I
P
, T
I
DM
thJC
I
AS
thJA
DS
GS
AS
D
S
D
stg
G
N-Channel MOSFET
g
Tested
®
Power MOSFET
Typical
D
S
10 s
4.1
3.2
2.1
25
20
20
53
5
- 55 to 150
± 20
260
30
60
40
80
Steady State
Maximum
1.5
1.8
1.1
3.2
15
12
25
70
Vishay Siliconix
Si7892BDP
www.vishay.com
®
°C/W
Unit
Unit
mJ
°C
RoHS
W
COMPLIANT
V
A
1

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si7892bdp Summary of contents

Page 1

... Bottom View Ordering Information: Si7892BDP-T1-E3 (Lead (Pb)-free) Si7892BDP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150°C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) ...

Page 2

... Si7892BDP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Gate Threshold Voltage V Temperature Coefficient DS ΔV V Temperature Coefficient GS(th) Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Input Capacitance ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73228 S-80440-Rev. C, 03-Mar- 22.2 29.6 37 °C J 0.8 1.0 1.2 Si7892BDP Vishay Siliconix 4500 C iss 4000 3500 3000 2500 2000 1500 C oss 1000 C rss 500 Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si7892BDP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0.4 0.2 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage Limited Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 250 µ 100 125 150 100 * DS(on 0 °C C Single Pulse 0.01 0 Drain-to-Source Voltage (V) ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73228. Document Number: 73228 S-80440-Rev. C, 03-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7892BDP Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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