MC804256K32L-12 MOSYS, MC804256K32L-12 Datasheet - Page 4

• Manufacturer Part Number: MC804256K32L-12
• Description: Stand Alone Memories Based on Its 1T-SRAM Technology
• Manufacturer: MOSYS

Table 3. Recommended Operating Conditions
Table 4. Absolute Maximum AC Operating Conditions
Table 5. Maximum DC Current Requirements
DS13, Rev 1.2 – 8/25/99
Symbol
I
I
I
DD1
DDZ
DD
Symbol
Symbol
V DDQ
V DD
tOVR
T AC
tSET
V oh
T AI
V ih
V ol
V ih
V il
V il
Operating current, device selected; all inputs < Vil or > Vih; cycle time > tKC min,
V DD = max, 0 pF load
Idle current, device deselected; ADSP#, ADSC#, GW#, BW#s, ADV# and all other
inputs except ZZ > 2.8 volts; cycle time > tKC min, V DD = max, 0 pF load
Sleep mode, clock stopped, all inputs > 2.8 v, V DD = max
Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Commercial Operating Temp.
Industrial Operating Temp.
Input High Voltage
Input Low Voltage
Parameter
Overshoot/Undershoot Voltage Duration
Overshoot/Undershoot Settling Time
© 1999 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086
Parameter
Preliminary Information
Condition
256Kx32, 256Kx36 Flow-Through
MC804256K32, MC804256K36
2.5V +38%/-5%
I oh = -5 mA
Condition
I ol = 5 mA
3.3V ±5%
Synchronous Burst SRAM
V SSQ
Min
1.8
-
1.0
3.135
2.375
Min
-0.3
1.8
2.4
-40
0
V DDQ +1.0
0.2*tCY
0.8*tCY
Max
0.8
V DDQ + 0.3
3.465
3.465
Max
0.8
0.4
70
85
Current
50
10
2
Units
ns
ns
V
V
Units
°
°
Units
V
V
V
V
V
V
C
C
mA
mA
mA
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