MC804256K32L-12 MOSYS, MC804256K32L-12 Datasheet - Page 10

• Manufacturer Part Number: MC804256K32L-12
• Description: Stand Alone Memories Based on Its 1T-SRAM Technology
• Manufacturer: MOSYS

Test and Measurement
Test Structure and Measurement Points
DS13, Rev 1.2 – 8/25/99
Notes
1
2
Valid Delay Measurement is made from the VDDQ / 2 on the input waveform to the VDDQ / 2 on the output
waveform. Input waveform should have a slew rate of 1V/ns.
Tri-state t
20% from its initial to final value VDDQ/2.
© 1999 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086
off
measurement is made from the VDDQ/2 on the input waveform to the output waveform moving
Figure 7. LQFP Mechanical Characteristics
Preliminary Information
256Kx32, 256Kx36 Flow-Through
MC804256K32, MC804256K36
Synchronous Burst SRAM
Page 10