MC804256K32L-12 MOSYS, MC804256K32L-12 Datasheet
MC804256K32L-12
Related parts for MC804256K32L-12
MC804256K32L-12 Summary of contents
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... MoSys technology. Peak operating power of a typical SRAM is 5x that of the MC804256K. This makes it ideal for portable applications as well as applications requiring a large amount of static RAM. 32Kx32/36, Part Number Designation Example : MC804256K32L-15 I Device Designation: MC8 :, Series: 04 Organization: 256K32, 256K36 Package Type: L =LQFP Speed: – 15 – 12 – ...
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... CLK ADV# ADSC# ADSP# A[17:0] GW# BWE# BW4# BW3# BW2# BW1# CE1# CE2 OE# DS13, Rev 1.2 – 8/25/99 © 1999 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 MC804256K32, MC804256K36 256Kx32, 256Kx36 Flow-Through Synchronous Burst SRAM Binary Counter CLK Q0 CE# Q1 CLR ...
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... Input High Voltage V il Input Low Voltage Ts Storage Temperature Notes: Max Vih is not to exceed maximum VDDQ DS13, Rev 1.2 – 8/25/99 © 1999 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 MC804256K32, MC804256K36 256Kx32, 256Kx36 Flow-Through Synchronous Burst SRAM Symbol Type Description ...
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... ZZ > 2.8 volts; cycle time > tKC min max load I Sleep mode, clock stopped, all inputs > 2 max DDZ DS13, Rev 1.2 – 8/25/99 © 1999 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 MC804256K32, MC804256K36 256Kx32, 256Kx36 Flow-Through Synchronous Burst SRAM Condition Min 3.3V ± ...
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... OE# to output invalid tWS GW#, BWx# setup tWH GW#, BWx# hold tZZs ZZ standby tZZREC ZZ recovery DS13, Rev 1.2 – 8/25/99 © 1999 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 MC804256K32, MC804256K36 256Kx32, 256Kx36 Flow-Through Synchronous Burst SRAM -10 -12 (100 MHz) (83 MHz) (66 MHz) Min ...
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... OE# tOELZ Data-Out 1a tKQLZ tKQ Data-In DS13, Rev 1.2 – 8/25/99 © 1999 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 MC804256K32, MC804256K36 256Kx32, 256Kx36 Flow-Through Synchronous Burst SRAM Burst Read tKC tKH tKL ADSP# is blocked by CE1# inactive tADSH ADSC# initiated read ...
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... CE2 tCES tCEH CE3# OE# Data-Out tDS Data-In 1a DS13, Rev 1.2 – 8/25/99 © 1999 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 MC804256K32, MC804256K36 256Kx32, 256Kx36 Flow-Through Synchronous Burst SRAM Burst Write Write tKC tKH tKL ADSP# is blocked by CE1# inactive tADSH ...
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... OE# tOELZ Data-Out 1a tKQLZ tKQ Data-In DS13, Rev 1.2 – 8/25/99 © 1999 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 MC804256K32, MC804256K36 256Kx32, 256Kx36 Flow-Through Synchronous Burst SRAM Single Write Burst Read ADSP# is blocked by CE1# inactive tADSS tADSH ADSC# initiated read ...
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... OE# tOELZ Data-Out 1a tKQLZ tKQ Data-In ZZ DS13, Rev 1.2 – 8/25/99 © 1999 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 MC804256K32, MC804256K36 256Kx32, 256Kx36 Flow-Through Synchronous Burst SRAM Snooze - With Data Retention tKC tKH tKL tAAH tWH tWH tWH ...
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... VDDQ/2 on the input waveform to the output waveform moving off 20% from its initial to final value VDDQ/2. Figure 7. LQFP Mechanical Characteristics DS13, Rev 1.2 – 8/25/99 © 1999 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 MC804256K32, MC804256K36 256Kx32, 256Kx36 Flow-Through Synchronous Burst SRAM Preliminary Information ...