tc51wkm616axbn75 TOSHIBA Semiconductor CORPORATION, tc51wkm616axbn75 Datasheet - Page 4

• Manufacturer Part Number: tc51wkm616axbn75
• Description: Toshiba Digital Integrated Circuit Silicon Gate Cmos 4,194,304-word 16-bit Cmos Pseudo Static
• Manufacturer: TOSHIBA Semiconductor CORPORATION

AC CHARACTERISTICS AND OPERATING CONDITIONS
(Ta
AC TEST CONDITIONS
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Output load
Input pulse level
Timing measurements
Reference level
t
RC
ACC
CO
OE
BA
COE
OEE
BE
OD
ODO
BD
OH
PM
PC
AA
AOH
WC
WP
CW
BW
AW
AS
WR
ODW
OEW
DS
DH
CS
CH
DPD
CHC
CHP
R
, t
SYMBOL
F
25°C to 85°C, V
Read Cycle Time
Address Access Time
Chip Enable (
Output Enable Access Time
Data Byte Control Access Time
Chip Enable Low to Output Active
Output Enable Low to Output Active
Data Byte Control Low to Output Active
Chip Enable High to Output High-Z
Output Enable High to Output High-Z
Data Byte Control High to Output High-Z
Output Data Hold Time
Page Mode Time
Page Mode Cycle Time
Page Mode Address Access Time
Page Mode Output Data Hold Time
Write Cycle Time
Write Pulse Width
Chip Enable to End of Write
Data Byte Control to End of Write
Address Valid to End of Write
Address Set-up Time
Write Recovery Time
Data Set-up Time
Data Hold Time
CE2 Set-up Time
CE2 Hold Time
CE2 Pulse Width
CE2 Hold from
CE2 Hold from Power On
WE Low to Output High-Z
WE High to Output Active
PARAMETER
DD
CE1
CE1
) Access Time
2.6 to 3.3 V, V
PARAMETER
DDQ
1.7 to 2.2 V) (See Note 5 to 11)
MIN
300
75
10
10
75
30
10
75
50
75
60
60
30
10
30
0
0
0
0
0
0
0
0
V
30 pF
DDQ
TC51WKM616AXBN75
CONDITION
V
V
DDQ
DDQ
5 ns
0.2 V, 0.2 V
1 TTL Gate
0.5
0.5
10000
10000
10000
MAX
2002-08-22 4/11
75
75
25
25
20
20
20
30
20
UNIT
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s