tc51wkm616axbn75 TOSHIBA Semiconductor CORPORATION, tc51wkm616axbn75 Datasheet - Page 2

• Manufacturer Part Number: tc51wkm616axbn75
• Description: Toshiba Digital Integrated Circuit Silicon Gate Cmos 4,194,304-word 16-bit Cmos Pseudo Static
• Manufacturer: TOSHIBA Semiconductor CORPORATION

BLOCK DIAGRAM
OPERATION MODE
Read(Word)
Read(Lower Byte)
Read(Upper Byte)
Write(Word)
Write(Lower Byte)
Write(Upper Byte)
Outputs Disabled
Standby
Deep Power-down Standby
Notes: L
I/O10
I/O12
I/O13
I/O14
I/O15
I/O16
I/O11
I/O8
CE2
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O9
WE
CE1
OE
UB
LB
MODE
Low-level Input(V
REFRESH
CONTROL
IL
), H
CE1
H
H
L
L
L
L
L
L
L
A10
A12
A13
A14
A15
A16
A17
A18
A19
A20
A21
A11
A9
CONTROL SIGNAL
CE2
High-level Input(V
CE
H
H
H
H
H
H
H
H
L
GENERATOR
COUNTER
REFRESH
ADDRESS
CE
OE
H
L
L
L
X
X
X
X
X
WE
H
H
H
H
X
X
L
L
L
IH
), X
A0 A1 A2 A3 A4 A5
LB
MEMORY CELL ARRAY
H
H
X
X
X
L
L
L
L
COLUMN ADDRESS
COLUMN ADDRESS
8,192
V
IH
(67,108,864)
SENSE AMP
DECODER
UB
BUFFER
or V
H
H
X
X
X
L
L
L
L
512
IL
, High-Z
Add
X
X
X
X
X
X
X
X
X
A6
16
A7 A8
I/O1 to I/O8
High-impedance
High-Z
Invalid
High-Z
High-Z
High-Z
D
D
D
D
OUT
OUT
IN
IN
CE
TC51WKM616AXBN75
I/O9 to I/O16
High-Z
Invalid
High-Z
High-Z
High-Z
D
D
V
GND
D
D
2002-08-22 2/11
OUT
OUT
DD
IN
IN
POWER
I
I
I
I
I
I
I
I
I
DDSD
DDO
DDO
DDO
DDO
DDO
DDO
DDO
DDS