tc51wkm616axbn75 TOSHIBA Semiconductor CORPORATION, tc51wkm616axbn75 Datasheet

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tc51wkm616axbn75

Manufacturer Part Number
tc51wkm616axbn75
Description
Toshiba Digital Integrated Circuit Silicon Gate Cmos 4,194,304-word 16-bit Cmos Pseudo Static
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
TENTATIVE
4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
DESCRIPTION
4,194,304 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high
density, high speed and low power. The device uses dual power supplies(2.6 to 3.3 V for core and 1.7 to 2.2 V for
output buffer). The device also features SRAM-like W/R timing whereby the device is controlled by CE1 , OE , and
deep power-down mode, realizing low-power standby.
FEATURES
PIN ASSIGNMENT
WE on asynchronous. The device has the page access operation. Page size is 8 words. The device also supports
The TC51WKM616AXBN is a 67,108,864-bit pseudo static random access memory(PSRAM) organized as
G
Organized as 4,194,304 words by 16 bits
Dual power supplies(2.6 to 3.3 V for core and
Direct TTL compatibility for all inputs and outputs
Deep power-down mode: Memory cell data invalid
Page operation mode:
Logic compatible with SRAM R/W ( WE ) pin
Standby current
A
B
C
D
E
F
H
1.7 to 2.2 V for output buffer)
Page read operation by 8 words
Standby
Deep power-down standby
V DDQ I/O13
I/O10 I/O11
I/O15 I/O14
I/O16
V SS
I/O9
A18
LB
1
I/O12
A19
OE
UB
A8
2
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
(FBGA48)
A17
A21
A14
A12
A0
A3
A5
A9
3
A16
A15
A13
A10
A1
A4
A6
A7
(TOP VIEW)
4
CE1
I/O2
I/O4
I/O5
I/O6
WE
A11
A2
5
100 A
V DD
5 A
CE2
I/O1
I/O3
V SS
I/O7
I/O8
A20
6
Access Times:
Package:
PIN NAMES
Access Time
Page Access Time
P-TFBGA48-0811-0.75BZ (Weight:
I/O1 to I/O16 Data Inputs/Outputs
CE1
OE Access Time
A0 to A21
LB , UB
A0 to A2
V
GND
CE2
V
CE1
WE
OE
DDQ
Access Time
DD
TC51WKM616AXBN75
Address Inputs
Page Address Inputs
Chip Enable Input
Chip select Input
Write Enable Input
Output Enable Input
Data Byte Control Inputs
Power Supply for Core
Power Supply for Output Buffer
Ground
2002-08-22 1/11
75 ns
75 ns
25 ns
30 ns
g typ.)

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tc51wkm616axbn75 Summary of contents

Page 1

... A18 A8 A9 A10 A11 (FBGA48) 100 CE2 I/O1 I/ I/O7 I/O8 A20 TC51WKM616AXBN75 Access Times: Access Time 75 ns Access Time 75 ns CE1 OE Access Time 25 ns Page Access Time 30 ns Package: P-TFBGA48-0811-0.75BZ (Weight: PIN NAMES A0 to A21 Address Inputs Page Address Inputs ...

Page 2

... High-level Input High TC51WKM616AXBN75 V DD GND I/O1 to I/O8 I/O9 to I/O16 OUT OUT X D High-Z OUT X High-Z D OUT Invalid IN X Invalid D IN ...

Page 3

... OUT V , CE2 V , CE1 IL IH Page add. cycling OUT V 0.2 V, CE2 CE1 DD CE2 0 MHz) TEST CONDITION V GND IN V OUT TC51WKM616AXBN75 VALUE 1.0 to 3.6 1 0.5 (3.6 V Max) DD 1.0 to 3.6 1 0.5 DDQ 150 260 0.6 50 25°C to 85°C) MIN TYP. MAX 2.6 2.75 3.3 1.7 1.8 2.2 1.6 V ...

Page 4

... CE2 Hold from CE1 CHC t CE2 Hold from Power On CHP AC TEST CONDITIONS PARAMETER Output load Input pulse level Timing measurements Reference level 1.7 to 2.2 V) (See Note 5 to 11) DDQ PARAMETER TC51WKM616AXBN75 MIN MAX UNIT 75 10000 10000 ...

Page 5

... OEE t COE INDETERMINATE AOH OEE OUT OUT t COE ACC TC51WKM616AXBN75 ODO t BD VALID DATA OUT AOH AOH OUT OUT ODO * Maximum 8 words ...

Page 6

... D IN (See Note 9) I/O1 to I/O16 CE WRITE CYCLE 2 ( CONTROLLED) Address A0 to A21 CE1 t CH CE2 OUT Hi-Z I/O1 to I/O16 D IN (See Note 9) I/O1 to I/O16 TC51WKM616AXBN75 (See Note ODW OEW Hi VALID DATA IN (See Note 8) ...

Page 7

... WRITE CYCLE CONTROLLED) Address A0 to A21 CE1 t CH CE2 OUT Hi-Z I/O1 to I/O16 D IN (See Note 9) I/O1 to I/O16 TC51WKM616AXBN75 (See Note ODW t COE VALID DATA IN Hi-Z 2002-08-22 7/11 ...

Page 8

... DPD t CS min t CHC t CHP min sustain over active status, as least one RC over 10 s min sustain over active status, as least one WC min must be needed during over 10 s TC51WKM616AXBN75 min RC t min WP t min WC 2002-08-22 8/11 ...

Page 9

... If CE1 goes LOW coincident with or after WE goes LOW, the outputs will remain at high impedance. (11) If CE1 goes HIGH coincident with or before WE goes HIGH, the outputs will remain at high impedance ns and t define the time at which the output goes the open condition and BD ODW TC51WKM616AXBN75 2002-08-22 9/11 ...

Page 10

... PACKAGE DIMENSIONS P-TFBGA48-0811-0.75BZ Weight: g (typ) 11.0 0 0. 0.75 2.875 0.375 (5.25) TC51WKM616AXBN75 Unit:mm A 2002-08-22 10/11 ...

Page 11

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. TC51WKM616AXBN75 000707EBA 2002-08-22 11/11 ...

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