tc51whm516axgn70 TOSHIBA Semiconductor CORPORATION, tc51whm516axgn70 Datasheet - Page 9

• Manufacturer Part Number: tc51whm516axgn70
• Description: Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos, 2,097,152-word By 16-bit Cmos Pseudo Static Ram
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Notes:
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(1)
(2)
(3)
(4)
(5)
(6)
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(8)
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Stresses greater than listed under “Absolute Maximum Ratings” may cause permanent damage to the
device.
All voltages are reference to GND.
I
I
AC measurements are assumed t
Parameters t
are not output voltage reference levels.
Data cannot be retained at deep power-down stand-by mode.
If OE is high during the write cycle, the outputs will remain at high impedance.
During the output state of I/O signals, input signals of reverse polarity must not be applied.
If CE1 or LB / UB goes LOW coincident with or after WE goes LOW, the outputs will remain at high
impedance.
If CE1 or LB / UB goes HIGH coincident with or before WE goes HIGH, the outputs will remain at
high impedance.
DDO
DDO
depends on the cycle time.
depends on output loading. Specified values are defined with the output open condition.
OD
, t
ODO
, t
BD
and t
R
ODW
, t
F
= 5 ns.
define the time at which the output goes the open condition and
TC51WHM516AXGN65,70
2002-03-14 9/11