tc51whm516axgn70 TOSHIBA Semiconductor CORPORATION, tc51whm516axgn70 Datasheet

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tc51whm516axgn70

Manufacturer Part Number
tc51whm516axgn70
Description
Toshiba Mos Digital Integrated Circuit Silicon Gate Cmos, 2,097,152-word By 16-bit Cmos Pseudo Static Ram
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
TENTATIVE
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
DESCRIPTION
2,097,152 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high
density, high speed and low power. The device operates single power supply. The device also features SRAM-like
W/R timing whereby the device is controlled by CE1 , OE , and WE on asynchronous. The device has the page
access operation. Page size is 8 words. The device also supports deep power-down mode, realizing low-power
standby.
FEATURES
PIN ASSIGNMENT
The TC51WHM516AXGN is a 33,554,432-bit pseudo static random access memory(PSRAM) organized as
C
D
G
H
Organized as 2,097,152 words by 16 bits
Single power supply voltage of 2.6 to 3.3 V
Direct TTL compatibility for all inputs and outputs
Deep power-down mode: Memory cell data invalid
Page operation mode:
Logic compatible with SRAM R/W ( WE ) pin
Standby current
A
B
E
F
Page read operation by 8 words
Standby
Deep power-down standby
I/O10 I/O11
I/O15 I/O14
I/O16
V SS
V DD
I/O9
A18
LB
1
I/O12
I/O13
A19
OE
UB
A8
2
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
(FBGA48)
A17
A14
A12
NC
A0
A3
A5
A9
3
A16
A15
A13
A10
A1
A4
A6
A7
(TOP VIEW)
4
CE1
I/O2
I/O4
I/O5
I/O6
WE
A11
A2
5
70 µA
V DD
V SS
5 µA
CE2
I/O1
I/O3
I/O7
I/O8
A20
6
Access Times:
Package:
PIN NAMES
Access Time
Page Access Time
P-TFBGA48-6mm × 7mm 0.75mm pitch
(Weight:
I/O1 to I/O16 Data Inputs/Outputs
CE1
OE Access Time
A0 to A20
A0 to A2
LB , UB
GND
CE2
V
CE1
WE
OE
NC
Access Time
DD
TC51WHM516AXGN65,70
Address Inputs
Page Address Inputs
Chip Enable Input
Chip select Input
Write Enable Input
Output Enable Input
Data Byte Control Inputs
Power
Ground
No Connection
g typ.)
2002-03-14 1/11
TC51WHM516AXGN
65 ns
65 ns
25 ns
30 ns
65
70 ns
70 ns
25 ns
30 ns
70

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tc51whm516axgn70 Summary of contents

Page 1

TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51WHM516AXGN is a 33,554,432-bit pseudo static random access memory(PSRAM) organized as 2,097,152 words by 16 bits. Using Toshiba’s CMOS technology and advanced ...

Page 2

BLOCK DIAGRAM CE A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 I/O16 REFRESH CONTROL CONTROL SIGNAL GENERATOR ...

Page 3

ABSOLUTE MAXIMUM RATINGS (See Note 1) SYMBOL RATING V Power Supply Voltage DD V Input Voltage IN V Output Voltage OUT T Operating Temperature opr. T Storage Temperature strg. T Soldering Temperature (10 s) solder P Power Dissipation D I ...

Page 4

AC CHARACTERISTICS AND OPERATING CONDITIONS ( − − − − 25°C to 85° 2.6 to 3.3 V) (See Note 5 to 11) DD SYMBOL PARAMETER t Read Cycle Time RC t ...

Page 5

TIMING DIAGRAMS READ CYCLE Address A0 to A20 CE1 CE2 OUT Hi-Z I/O1 to I/O16 PAGE READ CYCLE (8 words access) Address Address A3 to A20 CE1 CE2 ...

Page 6

WE WRITE CYCLE 1 ( CONTROLLED) Address A0 to A20 CE1 t CH CE2 OUT (See Note 10) I/O1 to I/O16 D IN (See Note 9) I/O1 to I/O16 CE WRITE CYCLE 2 ...

Page 7

UB LB WRITE CYCLE CONTROLLED) Address A0 to A20 CE1 t CH CE2 OUT Hi-Z I/O1 to I/O16 D IN (See Note 9) I/O1 to I/O16 TC51WHM516AXGN65,70 (See Note 8) ...

Page 8

Deep Power-down Timing CE1 CE2 Power-on Timing V min CE1 CE2 Provisions of Address Skew Read If multiple invalid address cycles shorter than t t min must be needed during 10µs. RC CE1 WE Address Write If ...

Page 9

Notes: (1) Stresses greater than listed under “Absolute Maximum Ratings” may cause permanent damage to the device. (2) All voltages are reference to GND. (3) I depends on the cycle time. DDO (4) I depends on output loading. Specified values ...

Page 10

PACKAGE DIMENSIONS 0.20 4 0.15 S Weight: g (typ) TC51WHM516AXGN65,70 9 8.9 0.05 4-C0.4 0 0.8 0.4 1.7 ( 5.6 ...

Page 11

RESTRICTIONS ON PRODUCT USE • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress ...

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