tc51whm516axgn70 TOSHIBA Semiconductor CORPORATION, tc51whm516axgn70 Datasheet
tc51whm516axgn70
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tc51whm516axgn70 Summary of contents
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TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51WHM516AXGN is a 33,554,432-bit pseudo static random access memory(PSRAM) organized as 2,097,152 words by 16 bits. Using Toshiba’s CMOS technology and advanced ...
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BLOCK DIAGRAM CE A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 I/O16 REFRESH CONTROL CONTROL SIGNAL GENERATOR ...
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ABSOLUTE MAXIMUM RATINGS (See Note 1) SYMBOL RATING V Power Supply Voltage DD V Input Voltage IN V Output Voltage OUT T Operating Temperature opr. T Storage Temperature strg. T Soldering Temperature (10 s) solder P Power Dissipation D I ...
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AC CHARACTERISTICS AND OPERATING CONDITIONS ( − − − − 25°C to 85° 2.6 to 3.3 V) (See Note 5 to 11) DD SYMBOL PARAMETER t Read Cycle Time RC t ...
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TIMING DIAGRAMS READ CYCLE Address A0 to A20 CE1 CE2 OUT Hi-Z I/O1 to I/O16 PAGE READ CYCLE (8 words access) Address Address A3 to A20 CE1 CE2 ...
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WE WRITE CYCLE 1 ( CONTROLLED) Address A0 to A20 CE1 t CH CE2 OUT (See Note 10) I/O1 to I/O16 D IN (See Note 9) I/O1 to I/O16 CE WRITE CYCLE 2 ...
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UB LB WRITE CYCLE CONTROLLED) Address A0 to A20 CE1 t CH CE2 OUT Hi-Z I/O1 to I/O16 D IN (See Note 9) I/O1 to I/O16 TC51WHM516AXGN65,70 (See Note 8) ...
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Deep Power-down Timing CE1 CE2 Power-on Timing V min CE1 CE2 Provisions of Address Skew Read If multiple invalid address cycles shorter than t t min must be needed during 10µs. RC CE1 WE Address Write If ...
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Notes: (1) Stresses greater than listed under “Absolute Maximum Ratings” may cause permanent damage to the device. (2) All voltages are reference to GND. (3) I depends on the cycle time. DDO (4) I depends on output loading. Specified values ...
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PACKAGE DIMENSIONS 0.20 4 0.15 S Weight: g (typ) TC51WHM516AXGN65,70 9 8.9 0.05 4-C0.4 0 0.8 0.4 1.7 ( 5.6 ...
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RESTRICTIONS ON PRODUCT USE • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress ...